The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Fotodiodos de guia de ondas (WGPDs) são dispositivos essenciais para receptores ópticos de alta velocidade em linhas troncais devido à sua capacidade potencial de fornecer alta eficiência e resposta de alta velocidade. Projetamos um fotodiodo de guia de onda para receptores ópticos de faixa de 40 Gb/s. As características do acoplamento óptico foram simuladas detalhadamente para otimizar a estrutura do guia de ondas, e os eletrodos do fotodiodo foram projetados para formar uma linha de transmissão coplanar para corresponder à impedância do sistema, o que minimizou a degradação da resposta de frequência. Uma camada de contato InGaAs altamente dopada com berílio e cultivada em baixa temperatura, cultivada por epitaxia de feixe molecular de fonte de gás, foi usada para reduzir a resistência em série, e aproximadamente 40% de redução da resistência em série foi alcançada. O dispositivo fabricado exibiu uma eficiência quântica externa muito alta de 81% para luz de 1.55 µm e uma largura de banda suficiente de mais de 40 GHz. Embora tenhamos utilizado um processo de fabricação convencional simples, excelentes características foram alcançadas devido ao design óptico otimizado e aos parâmetros parasitas bem suprimidos.
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Takeshi TAKEUCHI, Takeshi NAKATA, Kiyoshi FUKUCHI, Kikuo MAKITA, Kenko TAGUCHI, "A High-Efficiency Waveguide Photodiode for 40-Gb/s Optical Receivers" in IEICE TRANSACTIONS on Communications,
vol. E82-B, no. 8, pp. 1236-1242, August 1999, doi: .
Abstract: Waveguide photodiodes (WGPDs) are key devices for high-speed optical receivers in trunk lines because of their potential ability to provide both high efficiency and a high-speed response. We have designed a waveguide photodiode for 40-Gb/s-range optical receivers. The optical coupling characteristics were simulated in detail to optimize the waveguide structure, and the electrodes of the photodiode were designed to form a coplanar transmission line to match the system impedance, which minimized frequency-response degradation. A highly beryllium-doped, low-temperature-grown InGaAs contact layer grown by gas source molecular beam epitaxy was used to reduce the series resistance, and approximately 40% reduction of series resistance was achieved. The fabricated device exhibited both a very high external quantum efficiency of 81% for 1.55-µm light and a sufficient bandwidth of more than 40 GHz. Though we used a simple conventional fabrication process, excellent characteristics were achieved due to the optimized optical design and well suppressed parasitic parameters.
URL: https://global.ieice.org/en_transactions/communications/10.1587/e82-b_8_1236/_p
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@ARTICLE{e82-b_8_1236,
author={Takeshi TAKEUCHI, Takeshi NAKATA, Kiyoshi FUKUCHI, Kikuo MAKITA, Kenko TAGUCHI, },
journal={IEICE TRANSACTIONS on Communications},
title={A High-Efficiency Waveguide Photodiode for 40-Gb/s Optical Receivers},
year={1999},
volume={E82-B},
number={8},
pages={1236-1242},
abstract={Waveguide photodiodes (WGPDs) are key devices for high-speed optical receivers in trunk lines because of their potential ability to provide both high efficiency and a high-speed response. We have designed a waveguide photodiode for 40-Gb/s-range optical receivers. The optical coupling characteristics were simulated in detail to optimize the waveguide structure, and the electrodes of the photodiode were designed to form a coplanar transmission line to match the system impedance, which minimized frequency-response degradation. A highly beryllium-doped, low-temperature-grown InGaAs contact layer grown by gas source molecular beam epitaxy was used to reduce the series resistance, and approximately 40% reduction of series resistance was achieved. The fabricated device exhibited both a very high external quantum efficiency of 81% for 1.55-µm light and a sufficient bandwidth of more than 40 GHz. Though we used a simple conventional fabrication process, excellent characteristics were achieved due to the optimized optical design and well suppressed parasitic parameters.},
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - A High-Efficiency Waveguide Photodiode for 40-Gb/s Optical Receivers
T2 - IEICE TRANSACTIONS on Communications
SP - 1236
EP - 1242
AU - Takeshi TAKEUCHI
AU - Takeshi NAKATA
AU - Kiyoshi FUKUCHI
AU - Kikuo MAKITA
AU - Kenko TAGUCHI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Communications
SN -
VL - E82-B
IS - 8
JA - IEICE TRANSACTIONS on Communications
Y1 - August 1999
AB - Waveguide photodiodes (WGPDs) are key devices for high-speed optical receivers in trunk lines because of their potential ability to provide both high efficiency and a high-speed response. We have designed a waveguide photodiode for 40-Gb/s-range optical receivers. The optical coupling characteristics were simulated in detail to optimize the waveguide structure, and the electrodes of the photodiode were designed to form a coplanar transmission line to match the system impedance, which minimized frequency-response degradation. A highly beryllium-doped, low-temperature-grown InGaAs contact layer grown by gas source molecular beam epitaxy was used to reduce the series resistance, and approximately 40% reduction of series resistance was achieved. The fabricated device exhibited both a very high external quantum efficiency of 81% for 1.55-µm light and a sufficient bandwidth of more than 40 GHz. Though we used a simple conventional fabrication process, excellent characteristics were achieved due to the optimized optical design and well suppressed parasitic parameters.
ER -