The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Medimos a dependência da temperatura das características de ganho em lasers semicondutores de múltiplos poços quânticos (MQW) de 1.3 µm AlGaInAs / InP tensos usando o método Hakki-Paoli. Medindo as dependências da temperatura do valor de ganho de pico e do comprimento de onda do pico de ganho, avaliamos as dependências de temperatura da corrente limite e do comprimento de onda de oscilação, respectivamente. A pequena dependência da temperatura da corrente limite nos lasers AlGaInAs/InP é causada pela pequena dependência da temperatura da densidade de corrente de transparência, que é representada pela temperatura característica TJtr de 116 K. Em AlGaInAs/InP alta T0 lasers, a dependência da temperatura do comprimento de onda de oscilação é ligeiramente maior do que a dos lasers GaInAsP / InP devido à maior dependência da temperatura do comprimento de onda do bandgap 0.55 nm / K.
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Toshio HIGASHI, Tsuyoshi YAMAMOTO, Tsutomu ISHIKAWA, Takuya FUJII, Haruhisa SODA, Minoru YAMADA, "Temperature Dependence of Gain Characteristics in 1.3-µm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers" in IEICE TRANSACTIONS on Communications,
vol. E84-B, no. 5, pp. 1274-1281, May 2001, doi: .
Abstract: We have measured the temperature dependence of the gain characteristics in 1.3-µm AlGaInAs/InP strained multiple-quantum-well (MQW) semiconductor lasers using Hakki-Paoli method. By measuring the temperature dependences of the peak gain value and the gain peak wavelength, we evaluated the temperature dependences of the threshold current and the oscillation wavelength, respectively. The small temperature dependence of the threshold current in AlGaInAs/InP lasers is caused by the small temperature dependence of the transparency current density, which is represented by the characteristic temperature TJtr of 116 K. In AlGaInAs/InP high T0 lasers, the temperature dependence of the oscillation wavelength is slightly larger than that in GaInAsP/InP lasers because of the larger temperature dependence of bandgap wavelength 0.55 nm/K.
URL: https://global.ieice.org/en_transactions/communications/10.1587/e84-b_5_1274/_p
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@ARTICLE{e84-b_5_1274,
author={Toshio HIGASHI, Tsuyoshi YAMAMOTO, Tsutomu ISHIKAWA, Takuya FUJII, Haruhisa SODA, Minoru YAMADA, },
journal={IEICE TRANSACTIONS on Communications},
title={Temperature Dependence of Gain Characteristics in 1.3-µm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers},
year={2001},
volume={E84-B},
number={5},
pages={1274-1281},
abstract={We have measured the temperature dependence of the gain characteristics in 1.3-µm AlGaInAs/InP strained multiple-quantum-well (MQW) semiconductor lasers using Hakki-Paoli method. By measuring the temperature dependences of the peak gain value and the gain peak wavelength, we evaluated the temperature dependences of the threshold current and the oscillation wavelength, respectively. The small temperature dependence of the threshold current in AlGaInAs/InP lasers is caused by the small temperature dependence of the transparency current density, which is represented by the characteristic temperature TJtr of 116 K. In AlGaInAs/InP high T0 lasers, the temperature dependence of the oscillation wavelength is slightly larger than that in GaInAsP/InP lasers because of the larger temperature dependence of bandgap wavelength 0.55 nm/K.},
keywords={},
doi={},
ISSN={},
month={May},}
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TY - JOUR
TI - Temperature Dependence of Gain Characteristics in 1.3-µm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers
T2 - IEICE TRANSACTIONS on Communications
SP - 1274
EP - 1281
AU - Toshio HIGASHI
AU - Tsuyoshi YAMAMOTO
AU - Tsutomu ISHIKAWA
AU - Takuya FUJII
AU - Haruhisa SODA
AU - Minoru YAMADA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Communications
SN -
VL - E84-B
IS - 5
JA - IEICE TRANSACTIONS on Communications
Y1 - May 2001
AB - We have measured the temperature dependence of the gain characteristics in 1.3-µm AlGaInAs/InP strained multiple-quantum-well (MQW) semiconductor lasers using Hakki-Paoli method. By measuring the temperature dependences of the peak gain value and the gain peak wavelength, we evaluated the temperature dependences of the threshold current and the oscillation wavelength, respectively. The small temperature dependence of the threshold current in AlGaInAs/InP lasers is caused by the small temperature dependence of the transparency current density, which is represented by the characteristic temperature TJtr of 116 K. In AlGaInAs/InP high T0 lasers, the temperature dependence of the oscillation wavelength is slightly larger than that in GaInAsP/InP lasers because of the larger temperature dependence of bandgap wavelength 0.55 nm/K.
ER -