The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Um novo filtro de comprimento de onda insensível à temperatura que consiste em refletores Bragg distribuídos (DBRs) de GaAlAs / GaAs foi demonstrado. Este DBR microusinado é ajustado mecanicamente por expansão térmica diferencial. O deslocamento induzido por deformação de um espelho pode gerar funções de ajuste e corte de comprimento de onda com uma dependência de temperatura ajustável. Conseguimos controlar a dependência da temperatura neste filtro semicondutor microusinado, projetando adequadamente uma estrutura de cavidade vertical. A dependência de temperatura alcançada foi tão pequena quanto +0.01 nm/K, que é um décimo da dos filtros ópticos convencionais baseados em semicondutores. Além disso, um corte de comprimento de onda superior a 20 nm foi demonstrado após a conclusão da fabricação do dispositivo. Além disso, demonstramos um 4
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Takeru AMANO, Fumio KOYAMA, Nobuhiko NISHIYAMA, Akihiro MATSUTANI, Kenichi IGA, "Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter" in IEICE TRANSACTIONS on Communications,
vol. E84-B, no. 5, pp. 1304-1310, May 2001, doi: .
Abstract: A novel temperature insensitive wavelength filter consisting of GaAlAs/GaAs distributed Bragg reflectors (DBRs) has been demonstrated. This micromachined DBR is mechanically tuned by differential thermal expansion. The strain-induced displacement of one mirror can generate wavelength tuning and trimming functions with an adjustable temperature dependence. We succeeded in the control of temperature dependence in this micromachined semiconductor filter by properly designing a vertical cavity structure. The achieved temperature dependence was as small as +0.01 nm/K, which is one-tenth of that of conventional semiconductor based optical filters. Also, a wavelength trimming of over 20 nm was demonstrated after completing the device fabrication. In addition, we demonstrated a 4
URL: https://global.ieice.org/en_transactions/communications/10.1587/e84-b_5_1304/_p
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@ARTICLE{e84-b_5_1304,
author={Takeru AMANO, Fumio KOYAMA, Nobuhiko NISHIYAMA, Akihiro MATSUTANI, Kenichi IGA, },
journal={IEICE TRANSACTIONS on Communications},
title={Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter},
year={2001},
volume={E84-B},
number={5},
pages={1304-1310},
abstract={A novel temperature insensitive wavelength filter consisting of GaAlAs/GaAs distributed Bragg reflectors (DBRs) has been demonstrated. This micromachined DBR is mechanically tuned by differential thermal expansion. The strain-induced displacement of one mirror can generate wavelength tuning and trimming functions with an adjustable temperature dependence. We succeeded in the control of temperature dependence in this micromachined semiconductor filter by properly designing a vertical cavity structure. The achieved temperature dependence was as small as +0.01 nm/K, which is one-tenth of that of conventional semiconductor based optical filters. Also, a wavelength trimming of over 20 nm was demonstrated after completing the device fabrication. In addition, we demonstrated a 4
keywords={},
doi={},
ISSN={},
month={May},}
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TY - JOUR
TI - Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter
T2 - IEICE TRANSACTIONS on Communications
SP - 1304
EP - 1310
AU - Takeru AMANO
AU - Fumio KOYAMA
AU - Nobuhiko NISHIYAMA
AU - Akihiro MATSUTANI
AU - Kenichi IGA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Communications
SN -
VL - E84-B
IS - 5
JA - IEICE TRANSACTIONS on Communications
Y1 - May 2001
AB - A novel temperature insensitive wavelength filter consisting of GaAlAs/GaAs distributed Bragg reflectors (DBRs) has been demonstrated. This micromachined DBR is mechanically tuned by differential thermal expansion. The strain-induced displacement of one mirror can generate wavelength tuning and trimming functions with an adjustable temperature dependence. We succeeded in the control of temperature dependence in this micromachined semiconductor filter by properly designing a vertical cavity structure. The achieved temperature dependence was as small as +0.01 nm/K, which is one-tenth of that of conventional semiconductor based optical filters. Also, a wavelength trimming of over 20 nm was demonstrated after completing the device fabrication. In addition, we demonstrated a 4
ER -