The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Propomos um novo tipo de linha de microfita para transição de guia de onda fabricada em um substrato dielétrico de camada única. A correspondência de impedância da transição é obtida controlando o tamanho de um elemento correspondente e o comprimento de uma linha de microfita inserida através de um guia de onda. Como resultado dos experimentos, uma baixa perda de transmissão de 0.4 dB é obtida na frequência projetada de 76.5 GHz. A largura de banda da transição é investigada numericamente pelo método dos elementos finitos. Fica esclarecido que a largura de banda da transição se torna mais ampla à medida que a seção transversal do guia de ondas se torna menor e duas vezes mais larga que a de um elemento de antena patch de microfita convencional fabricado em um substrato dielétrico com os mesmos parâmetros. Além disso, o efeito dos erros na posição relativa entre o substrato dielétrico e o guia de ondas também é investigado. Torna-se claro que a degradação das características de transmissão é causada pela mudança da frequência de ressonância e mantém menos de 0.1 dB para uma precisão de fabricação dentro
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Hideo IIZUKA, Toshiaki WATANABE, Kazuo SATO, Kunitoshi NISHIKAWA, "Millimeter-Wave Microstrip Line to Waveguide Transition Fabricated on a Single Layer Dielectric Substrate" in IEICE TRANSACTIONS on Communications,
vol. E85-B, no. 6, pp. 1169-1177, June 2002, doi: .
Abstract: We propose a new type of microstrip line to waveguide transition fabricated on a single layer dielectric substrate. Impedance matching of the transition is achieved by controlling the size of a matching element and the length of an inserted microstrip line across a waveguide. As a result of experiments, low transmission loss of 0.4 dB is realized at the design frequency of 76.5 GHz. Bandwidth of the transition is numerically investigated by the finite element method. It is clarified that the bandwidth of the transition becomes wider as the cross section of the waveguide becomes smaller and twice as wide as that of a conventional microstrip patch antenna element fabricated on a dielectric substrate with the same parameters. In addition, the effect of errors in relative position between the dielectric substrate and the waveguide is also investigated. It becomes clear that degradation of transmission characteristics is caused by the shift of resonant frequency and keeps less than 0.1 dB for a manufacturing accuracy within
URL: https://global.ieice.org/en_transactions/communications/10.1587/e85-b_6_1169/_p
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@ARTICLE{e85-b_6_1169,
author={Hideo IIZUKA, Toshiaki WATANABE, Kazuo SATO, Kunitoshi NISHIKAWA, },
journal={IEICE TRANSACTIONS on Communications},
title={Millimeter-Wave Microstrip Line to Waveguide Transition Fabricated on a Single Layer Dielectric Substrate},
year={2002},
volume={E85-B},
number={6},
pages={1169-1177},
abstract={We propose a new type of microstrip line to waveguide transition fabricated on a single layer dielectric substrate. Impedance matching of the transition is achieved by controlling the size of a matching element and the length of an inserted microstrip line across a waveguide. As a result of experiments, low transmission loss of 0.4 dB is realized at the design frequency of 76.5 GHz. Bandwidth of the transition is numerically investigated by the finite element method. It is clarified that the bandwidth of the transition becomes wider as the cross section of the waveguide becomes smaller and twice as wide as that of a conventional microstrip patch antenna element fabricated on a dielectric substrate with the same parameters. In addition, the effect of errors in relative position between the dielectric substrate and the waveguide is also investigated. It becomes clear that degradation of transmission characteristics is caused by the shift of resonant frequency and keeps less than 0.1 dB for a manufacturing accuracy within
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - Millimeter-Wave Microstrip Line to Waveguide Transition Fabricated on a Single Layer Dielectric Substrate
T2 - IEICE TRANSACTIONS on Communications
SP - 1169
EP - 1177
AU - Hideo IIZUKA
AU - Toshiaki WATANABE
AU - Kazuo SATO
AU - Kunitoshi NISHIKAWA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Communications
SN -
VL - E85-B
IS - 6
JA - IEICE TRANSACTIONS on Communications
Y1 - June 2002
AB - We propose a new type of microstrip line to waveguide transition fabricated on a single layer dielectric substrate. Impedance matching of the transition is achieved by controlling the size of a matching element and the length of an inserted microstrip line across a waveguide. As a result of experiments, low transmission loss of 0.4 dB is realized at the design frequency of 76.5 GHz. Bandwidth of the transition is numerically investigated by the finite element method. It is clarified that the bandwidth of the transition becomes wider as the cross section of the waveguide becomes smaller and twice as wide as that of a conventional microstrip patch antenna element fabricated on a dielectric substrate with the same parameters. In addition, the effect of errors in relative position between the dielectric substrate and the waveguide is also investigated. It becomes clear that degradation of transmission characteristics is caused by the shift of resonant frequency and keeps less than 0.1 dB for a manufacturing accuracy within
ER -