The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
O vazamento de canal lateral (SC) de um chip de dispositivo criptográfico é simulado como a corrente dinâmica fluindo para fora do chip. Ao avaliar a corrente simulada, é essencial uma avaliação por comparação com uma medição real; no entanto, é difícil compará-los diretamente. Isso ocorre porque uma forma de onda medida é normalmente a tensão de saída da sonda colocada na posição de observação fora do chip, e a corrente dinâmica real é modificada por várias impedâncias de transferência. Portanto, neste artigo, a tensão da ponta de prova é convertida em corrente dinâmica usando um macromodelo EMC de um dispositivo criptográfico que está sendo avaliado. Este artigo mostra que os resultados da amplitude e da análise SC (análise de potência de correlação e medições para divulgação) da corrente dinâmica simulada foram avaliados adequadamente usando o macromodelo EMC. Uma avaliação confirma que a forma da corrente simulada corresponde à medida; além disso, os resultados da análise SC concordaram bem com os medidos. Com base nos resultados, confirma-se que uma simulação de nível de transferência de registro (RTL) da corrente dinâmica fornece uma estimativa razoável dos traços SC.
Yusuke YANO
Okayama University
Kengo IOKIBE
Okayama University
Toshiaki TESHIMA
Okayama University
Yoshitaka TOYOTA
Okayama University
Toshihiro KATASHITA
National Institute of Advanced Industrial Science and Technology
Yohei HORI
National Institute of Advanced Industrial Science and Technology
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Yusuke YANO, Kengo IOKIBE, Toshiaki TESHIMA, Yoshitaka TOYOTA, Toshihiro KATASHITA, Yohei HORI, "Evaluation of Side-Channel Leakage Simulation by Using EMC Macro-Model of Cryptographic Devices" in IEICE TRANSACTIONS on Communications,
vol. E104-B, no. 2, pp. 178-186, February 2021, doi: 10.1587/transcom.2020EBP3015.
Abstract: Side-channel (SC) leakage from a cryptographic device chip is simulated as the dynamic current flowing out of the chip. When evaluating the simulated current, an evaluation by comparison with an actual measurement is essential; however, it is difficult to compare them directly. This is because a measured waveform is typically the output voltage of probe placed at the observation position outside the chip, and the actual dynamic current is modified by several transfer impedances. Therefore, in this paper, the probe voltage is converted into the dynamic current by using an EMC macro-model of a cryptographic device being evaluated. This paper shows that both the amplitude and the SC analysis (correlation power analysis and measurements to disclosure) results of the simulated dynamic current were evaluated appropriately by using the EMC macro-model. An evaluation confirms that the shape of the simulated current matches the measured one; moreover, the SC analysis results agreed with the measured ones well. On the basis of the results, it is confirmed that a register-transfer level (RTL) simulation of the dynamic current gives a reasonable estimation of SC traces.
URL: https://global.ieice.org/en_transactions/communications/10.1587/transcom.2020EBP3015/_p
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@ARTICLE{e104-b_2_178,
author={Yusuke YANO, Kengo IOKIBE, Toshiaki TESHIMA, Yoshitaka TOYOTA, Toshihiro KATASHITA, Yohei HORI, },
journal={IEICE TRANSACTIONS on Communications},
title={Evaluation of Side-Channel Leakage Simulation by Using EMC Macro-Model of Cryptographic Devices},
year={2021},
volume={E104-B},
number={2},
pages={178-186},
abstract={Side-channel (SC) leakage from a cryptographic device chip is simulated as the dynamic current flowing out of the chip. When evaluating the simulated current, an evaluation by comparison with an actual measurement is essential; however, it is difficult to compare them directly. This is because a measured waveform is typically the output voltage of probe placed at the observation position outside the chip, and the actual dynamic current is modified by several transfer impedances. Therefore, in this paper, the probe voltage is converted into the dynamic current by using an EMC macro-model of a cryptographic device being evaluated. This paper shows that both the amplitude and the SC analysis (correlation power analysis and measurements to disclosure) results of the simulated dynamic current were evaluated appropriately by using the EMC macro-model. An evaluation confirms that the shape of the simulated current matches the measured one; moreover, the SC analysis results agreed with the measured ones well. On the basis of the results, it is confirmed that a register-transfer level (RTL) simulation of the dynamic current gives a reasonable estimation of SC traces.},
keywords={},
doi={10.1587/transcom.2020EBP3015},
ISSN={1745-1345},
month={February},}
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TY - JOUR
TI - Evaluation of Side-Channel Leakage Simulation by Using EMC Macro-Model of Cryptographic Devices
T2 - IEICE TRANSACTIONS on Communications
SP - 178
EP - 186
AU - Yusuke YANO
AU - Kengo IOKIBE
AU - Toshiaki TESHIMA
AU - Yoshitaka TOYOTA
AU - Toshihiro KATASHITA
AU - Yohei HORI
PY - 2021
DO - 10.1587/transcom.2020EBP3015
JO - IEICE TRANSACTIONS on Communications
SN - 1745-1345
VL - E104-B
IS - 2
JA - IEICE TRANSACTIONS on Communications
Y1 - February 2021
AB - Side-channel (SC) leakage from a cryptographic device chip is simulated as the dynamic current flowing out of the chip. When evaluating the simulated current, an evaluation by comparison with an actual measurement is essential; however, it is difficult to compare them directly. This is because a measured waveform is typically the output voltage of probe placed at the observation position outside the chip, and the actual dynamic current is modified by several transfer impedances. Therefore, in this paper, the probe voltage is converted into the dynamic current by using an EMC macro-model of a cryptographic device being evaluated. This paper shows that both the amplitude and the SC analysis (correlation power analysis and measurements to disclosure) results of the simulated dynamic current were evaluated appropriately by using the EMC macro-model. An evaluation confirms that the shape of the simulated current matches the measured one; moreover, the SC analysis results agreed with the measured ones well. On the basis of the results, it is confirmed that a register-transfer level (RTL) simulation of the dynamic current gives a reasonable estimation of SC traces.
ER -