The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
As características elétricas do driver mecanicamente flexível LSI tão fino quanto 35 µm montado diretamente em um painel de exibição flexível foram analisadas com precisão. Os transistores de alta tensão neste LSI mostram a diminuição da corrente em 10-30% na região de alta tensão, em comparação com um LSI de espessura comum. Esses fenômenos podem estar associados a um efeito de autoaquecimento. Consideramos a difusão térmica no chip fino alterando o material do estágio de medição. Além disso, analisamos as características do transistor no chip fino sob condições de flexão convexas e côncavas. Foi observada a alteração da corrente de dreno por efeito piezoresistivo.
Michihiro ASAKAWA
Takuro NAKASHIMA
Tsubasa SAEKI
Reiji HATTORI
Akihiko YOKOO
Ryo SAKURAI
Norio NIHEI
Yoshitomo MASUDA
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Michihiro ASAKAWA, Takuro NAKASHIMA, Tsubasa SAEKI, Reiji HATTORI, Akihiko YOKOO, Ryo SAKURAI, Norio NIHEI, Yoshitomo MASUDA, "Electrical Characteristics of Driver LSI with 35 µm Thickness for Flexible Display" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 10, pp. 1570-1575, October 2008, doi: 10.1093/ietele/e91-c.10.1570.
Abstract: Electrical characteristics of the mechanically flexible driver LSI as thin as 35 µm mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.10.1570/_p
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@ARTICLE{e91-c_10_1570,
author={Michihiro ASAKAWA, Takuro NAKASHIMA, Tsubasa SAEKI, Reiji HATTORI, Akihiko YOKOO, Ryo SAKURAI, Norio NIHEI, Yoshitomo MASUDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electrical Characteristics of Driver LSI with 35 µm Thickness for Flexible Display},
year={2008},
volume={E91-C},
number={10},
pages={1570-1575},
abstract={Electrical characteristics of the mechanically flexible driver LSI as thin as 35 µm mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed.},
keywords={},
doi={10.1093/ietele/e91-c.10.1570},
ISSN={1745-1353},
month={October},}
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TY - JOUR
TI - Electrical Characteristics of Driver LSI with 35 µm Thickness for Flexible Display
T2 - IEICE TRANSACTIONS on Electronics
SP - 1570
EP - 1575
AU - Michihiro ASAKAWA
AU - Takuro NAKASHIMA
AU - Tsubasa SAEKI
AU - Reiji HATTORI
AU - Akihiko YOKOO
AU - Ryo SAKURAI
AU - Norio NIHEI
AU - Yoshitomo MASUDA
PY - 2008
DO - 10.1093/ietele/e91-c.10.1570
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2008
AB - Electrical characteristics of the mechanically flexible driver LSI as thin as 35 µm mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed.
ER -