The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
É proposto um amplificador diferencial de baixa distorção e baixo ruído usando a diferença entre as impedâncias dos modos par e ímpar. Para realizar um amplificador com características de alto OIP3 e baixo NF, a impedância do circuito de polarização deve ser baixa (<300 Ω) na frequência de diferença e alta (>4 kΩ) na frequência da portadora. Embora a resposta de frequência da impedância do circuito de polarização só possa atender a essas condições com dificuldade, devido à largura de banda do sinal Tx de 20 MHz para 3G LTE, o amplificador proposto pode atingir a diferença de impedância usando as propriedades de uma configuração diferencial onde o sinal de frequência de diferença é o modo par e a frequência portadora é o modo ímpar. Foi demonstrado que o NF do amplificador proposto, que foi fabricado em tecnologia SiGe BiCMOS de 0.18 µm operando a 2.14 GHz, pode ser mantido em 1.6 dB ou menos e um OIP3 de 9.0 dBm pode ser alcançado, que é 3 dB maior. do que um amplificador convencional, na condição em que o ganho de potência é superior a 18 dB.
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Toshifumi NAKATANI, Koichi OGAWA, "A Low Distortion and Low Noise Differential Amplifier Suitable for 3G LTE Applications Using the Even- and Odd-Mode Impedance Differences of a Bias Circuit" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 6, pp. 844-853, June 2008, doi: 10.1093/ietele/e91-c.6.844.
Abstract: A low distortion and low noise differential amplifier using the difference between the even- and odd-mode impedances is proposed. In order to realize an amplifier with high OIP3 and low NF characteristics, the impedance of the bias circuit should be low (<300 Ω) at the difference frequency and high (>4 kΩ) at the carrier frequency. Although the frequency response of the bias circuit impedance can only meet these conditions with difficulty, owing to the 20 MHz Tx signal bandwidth for 3G LTE, the proposed amplifier can achieve the impedance difference using the properties of a differential configuration where the difference frequency signal is the even-mode and the carrier frequency is the odd-mode. It has been demonstrated that the NF of the proposed amplifier, which has been fabricated in 0.18 µm SiGe BiCMOS technology operating at 2.14 GHz, can be kept to 1.6 dB or less and an OIP3 of 9.0 dBm can be achieved, which is 3 dB higher than that of a conventional amplifier, in the condition where the power gain is greater than 18 dB.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.6.844/_p
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@ARTICLE{e91-c_6_844,
author={Toshifumi NAKATANI, Koichi OGAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Low Distortion and Low Noise Differential Amplifier Suitable for 3G LTE Applications Using the Even- and Odd-Mode Impedance Differences of a Bias Circuit},
year={2008},
volume={E91-C},
number={6},
pages={844-853},
abstract={A low distortion and low noise differential amplifier using the difference between the even- and odd-mode impedances is proposed. In order to realize an amplifier with high OIP3 and low NF characteristics, the impedance of the bias circuit should be low (<300 Ω) at the difference frequency and high (>4 kΩ) at the carrier frequency. Although the frequency response of the bias circuit impedance can only meet these conditions with difficulty, owing to the 20 MHz Tx signal bandwidth for 3G LTE, the proposed amplifier can achieve the impedance difference using the properties of a differential configuration where the difference frequency signal is the even-mode and the carrier frequency is the odd-mode. It has been demonstrated that the NF of the proposed amplifier, which has been fabricated in 0.18 µm SiGe BiCMOS technology operating at 2.14 GHz, can be kept to 1.6 dB or less and an OIP3 of 9.0 dBm can be achieved, which is 3 dB higher than that of a conventional amplifier, in the condition where the power gain is greater than 18 dB.},
keywords={},
doi={10.1093/ietele/e91-c.6.844},
ISSN={1745-1353},
month={June},}
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TY - JOUR
TI - A Low Distortion and Low Noise Differential Amplifier Suitable for 3G LTE Applications Using the Even- and Odd-Mode Impedance Differences of a Bias Circuit
T2 - IEICE TRANSACTIONS on Electronics
SP - 844
EP - 853
AU - Toshifumi NAKATANI
AU - Koichi OGAWA
PY - 2008
DO - 10.1093/ietele/e91-c.6.844
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2008
AB - A low distortion and low noise differential amplifier using the difference between the even- and odd-mode impedances is proposed. In order to realize an amplifier with high OIP3 and low NF characteristics, the impedance of the bias circuit should be low (<300 Ω) at the difference frequency and high (>4 kΩ) at the carrier frequency. Although the frequency response of the bias circuit impedance can only meet these conditions with difficulty, owing to the 20 MHz Tx signal bandwidth for 3G LTE, the proposed amplifier can achieve the impedance difference using the properties of a differential configuration where the difference frequency signal is the even-mode and the carrier frequency is the odd-mode. It has been demonstrated that the NF of the proposed amplifier, which has been fabricated in 0.18 µm SiGe BiCMOS technology operating at 2.14 GHz, can be kept to 1.6 dB or less and an OIP3 of 9.0 dBm can be achieved, which is 3 dB higher than that of a conventional amplifier, in the condition where the power gain is greater than 18 dB.
ER -