The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
A integração heterogênea de HEMTs de GaAs em um substrato cerâmico de AlN coberto com poliimida foi demonstrada usando uma técnica de automontagem fluídica (FSA). Usamos blocos de dispositivos finos para o FSA, que apresentam várias vantagens. Em particular, eles podem reduzir a capacitância da fonte de drenagem Cds dos HEMTs montados se o substrato tiver uma constante dielétrica baixa. Este é um novo tipo de tecnologia de semicondutor sobre isolante (SOI). As propriedades dc e RF dos GaAs HEMTs no substrato poliimida/AlN foram estudadas e a redução de Cds foi confirmado. Esta técnica foi aplicada com sucesso ao switch SPDT, onde um baixo Cds é essencial para um bom isolamento.
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Koichi MAEZAWA, Ikuo SOGA, Shigeru KISHIMOTO, Takashi MIZUTANI, Kazuhiro AKAMATSU, "A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1025-1030, July 2008, doi: 10.1093/ietele/e91-c.7.1025.
Abstract: The heterogeneous integration of GaAs HEMTs on a polyimide-covered AlN ceramic substrate was demonstrated using a fluidic self-assembly (FSA) technique. We used thin device blocks for the FSA, which have various advantages. In particular, they can reduce the drain-source capacitance Cds of the assembled HEMTs if the substrate has a low dielectric constant. This is a novel kind of semiconductor-on-insulator (SOI) technology. The dc and RF properties of the GaAs HEMTs on the polyimide/AlN substrate were studied and the reduction of Cds was confirmed. This technique was successfully applied to the SPDT switch, where a low Cds is essential for good isolation.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1025/_p
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@ARTICLE{e91-c_7_1025,
author={Koichi MAEZAWA, Ikuo SOGA, Shigeru KISHIMOTO, Takashi MIZUTANI, Kazuhiro AKAMATSU, },
journal={IEICE TRANSACTIONS on Electronics},
title={A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch},
year={2008},
volume={E91-C},
number={7},
pages={1025-1030},
abstract={The heterogeneous integration of GaAs HEMTs on a polyimide-covered AlN ceramic substrate was demonstrated using a fluidic self-assembly (FSA) technique. We used thin device blocks for the FSA, which have various advantages. In particular, they can reduce the drain-source capacitance Cds of the assembled HEMTs if the substrate has a low dielectric constant. This is a novel kind of semiconductor-on-insulator (SOI) technology. The dc and RF properties of the GaAs HEMTs on the polyimide/AlN substrate were studied and the reduction of Cds was confirmed. This technique was successfully applied to the SPDT switch, where a low Cds is essential for good isolation.},
keywords={},
doi={10.1093/ietele/e91-c.7.1025},
ISSN={1745-1353},
month={July},}
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TY - JOUR
TI - A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
T2 - IEICE TRANSACTIONS on Electronics
SP - 1025
EP - 1030
AU - Koichi MAEZAWA
AU - Ikuo SOGA
AU - Shigeru KISHIMOTO
AU - Takashi MIZUTANI
AU - Kazuhiro AKAMATSU
PY - 2008
DO - 10.1093/ietele/e91-c.7.1025
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - The heterogeneous integration of GaAs HEMTs on a polyimide-covered AlN ceramic substrate was demonstrated using a fluidic self-assembly (FSA) technique. We used thin device blocks for the FSA, which have various advantages. In particular, they can reduce the drain-source capacitance Cds of the assembled HEMTs if the substrate has a low dielectric constant. This is a novel kind of semiconductor-on-insulator (SOI) technology. The dc and RF properties of the GaAs HEMTs on the polyimide/AlN substrate were studied and the reduction of Cds was confirmed. This technique was successfully applied to the SPDT switch, where a low Cds is essential for good isolation.
ER -