The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Este artigo revisará o desenvolvimento de dispositivos de potência de SiC, especialmente transistores de efeito de campo de junção de potência de SiC (JFETs). Serão apresentadas justificativas e diferentes abordagens para o desenvolvimento de JFETs de potência de SiC, com foco em JFETs de potência normalmente desligados que podem fornecer o altamente desejado recurso de salvamento de falhas para aplicações confiáveis de comutação de energia. Novos resultados para a primeira demonstração de SiC Power ICs serão apresentados e o potencial para conversores de energia CC-CC distribuídos em frequências superiores a 35 MHz será discutido.
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Jian H. ZHAO, Kuang SHENG, Yongxi ZHANG, Ming SU, "Current Status and Future Prospects of SiC Power JFETs and ICs" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1031-1041, July 2008, doi: 10.1093/ietele/e91-c.7.1031.
Abstract: This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35 MHz will be discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1031/_p
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@ARTICLE{e91-c_7_1031,
author={Jian H. ZHAO, Kuang SHENG, Yongxi ZHANG, Ming SU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Current Status and Future Prospects of SiC Power JFETs and ICs},
year={2008},
volume={E91-C},
number={7},
pages={1031-1041},
abstract={This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35 MHz will be discussed.},
keywords={},
doi={10.1093/ietele/e91-c.7.1031},
ISSN={1745-1353},
month={July},}
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TY - JOUR
TI - Current Status and Future Prospects of SiC Power JFETs and ICs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1031
EP - 1041
AU - Jian H. ZHAO
AU - Kuang SHENG
AU - Yongxi ZHANG
AU - Ming SU
PY - 2008
DO - 10.1093/ietele/e91-c.7.1031
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35 MHz will be discussed.
ER -