The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Com base nas características de RF dos transistores de efeito de campo de diamante tipo p (FETs) com terminação de superfície de hidrogênio, estabelecemos um modelo de circuito equivalente (EQC). A partir de comparações de três casos, revelamos que para representar o desempenho do dispositivo no EQC, a resistência da fonte, da porta e do dreno deve ser considerada, mas que a resistência da porta-fonte e da porta-dreno pode ser ignorada. As características dos FETs de diamante são (1) um platô da capacitância da porta em uma determinada faixa de tensão da porta. (2) máximo fT e fMAX frequências de corte próximas à tensão limite da porta e (3) uma alta fMAX/fT relação
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Makoto KASU, Kenji UEDA, Hiroyuki KAGESHIMA, Yoshiharu YAMAUCHI, "RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1042-1049, July 2008, doi: 10.1093/ietele/e91-c.7.1042.
Abstract: On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, gate, and drain resistance should be considered but that the gate-source and gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the gate capacitance in a certain gate voltage range. (2) maximum fT and fMAX cut-off frequencies near the threshold gate voltage, and (3) a high fMAX/fT ratio
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1042/_p
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@ARTICLE{e91-c_7_1042,
author={Makoto KASU, Kenji UEDA, Hiroyuki KAGESHIMA, Yoshiharu YAMAUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination},
year={2008},
volume={E91-C},
number={7},
pages={1042-1049},
abstract={On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, gate, and drain resistance should be considered but that the gate-source and gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the gate capacitance in a certain gate voltage range. (2) maximum fT and fMAX cut-off frequencies near the threshold gate voltage, and (3) a high fMAX/fT ratio
keywords={},
doi={10.1093/ietele/e91-c.7.1042},
ISSN={1745-1353},
month={July},}
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TY - JOUR
TI - RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
T2 - IEICE TRANSACTIONS on Electronics
SP - 1042
EP - 1049
AU - Makoto KASU
AU - Kenji UEDA
AU - Hiroyuki KAGESHIMA
AU - Yoshiharu YAMAUCHI
PY - 2008
DO - 10.1093/ietele/e91-c.7.1042
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, gate, and drain resistance should be considered but that the gate-source and gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the gate capacitance in a certain gate voltage range. (2) maximum fT and fMAX cut-off frequencies near the threshold gate voltage, and (3) a high fMAX/fT ratio
ER -