The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
A incompatibilidade de capacitores é um parâmetro importante do dispositivo para aplicações analógicas de precisão. Nos últimos dez anos, a técnica de medição de comporta flutuante tem sido amplamente utilizada para sua caracterização. Neste artigo descrevemos o impacto da corrente de fuga na técnica. O vazamento pode vir, por exemplo, de MOSFETs de óxido de porta fina ou de capacitores de alta constante dielétrica em tecnologias avançadas. Simulação SPICE, medição de bancada, modelo analítico e análises numéricas são apresentadas para ilustrar o problema e os principais fatores contribuintes. Critérios para caracterização precisa de incompatibilidade sistemática e aleatória de capacitores são desenvolvidos, e métodos práticos para aumentar a precisão da medição são discutidos.
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Weidong TIAN, Joe R. TROGOLO, Bob TODD, "Leakage Current and Floating Gate Capacitor Matching Test" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 8, pp. 1315-1320, August 2008, doi: 10.1093/ietele/e91-c.8.1315.
Abstract: Capacitor mismatch is an important device parameter for precision analog applications. In the last ten years, the floating gate measurement technique has been widely used for its characterization. In this paper we describe the impact of leakage current on the technique. The leakage can come from, for example, thin gate oxide MOSFETs or high dielectric constant capacitors in advanced technologies. SPICE simulation, bench measurement, analytical model and numerical analyses are presented to illustrate the problem and key contributing factors. Criteria for accurate capacitor systematic and random mismatch characterization are developed, and practical methods of increasing measurement accuracy are discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.8.1315/_p
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@ARTICLE{e91-c_8_1315,
author={Weidong TIAN, Joe R. TROGOLO, Bob TODD, },
journal={IEICE TRANSACTIONS on Electronics},
title={Leakage Current and Floating Gate Capacitor Matching Test},
year={2008},
volume={E91-C},
number={8},
pages={1315-1320},
abstract={Capacitor mismatch is an important device parameter for precision analog applications. In the last ten years, the floating gate measurement technique has been widely used for its characterization. In this paper we describe the impact of leakage current on the technique. The leakage can come from, for example, thin gate oxide MOSFETs or high dielectric constant capacitors in advanced technologies. SPICE simulation, bench measurement, analytical model and numerical analyses are presented to illustrate the problem and key contributing factors. Criteria for accurate capacitor systematic and random mismatch characterization are developed, and practical methods of increasing measurement accuracy are discussed.},
keywords={},
doi={10.1093/ietele/e91-c.8.1315},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - Leakage Current and Floating Gate Capacitor Matching Test
T2 - IEICE TRANSACTIONS on Electronics
SP - 1315
EP - 1320
AU - Weidong TIAN
AU - Joe R. TROGOLO
AU - Bob TODD
PY - 2008
DO - 10.1093/ietele/e91-c.8.1315
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2008
AB - Capacitor mismatch is an important device parameter for precision analog applications. In the last ten years, the floating gate measurement technique has been widely used for its characterization. In this paper we describe the impact of leakage current on the technique. The leakage can come from, for example, thin gate oxide MOSFETs or high dielectric constant capacitors in advanced technologies. SPICE simulation, bench measurement, analytical model and numerical analyses are presented to illustrate the problem and key contributing factors. Criteria for accurate capacitor systematic and random mismatch characterization are developed, and practical methods of increasing measurement accuracy are discussed.
ER -