The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
É apresentada uma estrutura de teste para analisar a assimetria e dependência de orientação de MOSFETs. n-MOSFETs com 8 orientações de canal diferentes e três tipos de condições de processo foram medidos e características de simetria de IDsat e euBmax no que diz respeito ao intercâmbio de fonte e dreno foi examinado. Embora tanto euDsat e euBmax têm dependência de orientação de canal semelhante, euBmax em medições S/D intercambiadas apresenta características assimétricas, que podem ser aplicadas a um método sensível para detecção de assimetria de dispositivos.
Toshihiro MATSUDA
Yuya SUGIYAMA
Keita NOHARA
Kazuhiro MORITA
Hideyuki IWATA
Takashi OHZONE
Takayuki MORISHITA
Kiyotaka KOMOKU
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copiar
Toshihiro MATSUDA, Yuya SUGIYAMA, Keita NOHARA, Kazuhiro MORITA, Hideyuki IWATA, Takashi OHZONE, Takayuki MORISHITA, Kiyotaka KOMOKU, "A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 8, pp. 1331-1337, August 2008, doi: 10.1093/ietele/e91-c.8.1331.
Abstract: A test structure to analyze asymmetry and orientation dependence of MOSFETs is presented. n-MOSFETs with 8 different channel orientation and three kinds of process conditions were measured and symmetry characteristics of IDsat and IBmax with respect to the interchange of source and drain was examined. Although both IDsat and IBmax have similar channel orientation dependence, IBmax in interchanged S/D measurements shows asymmetrical characteristics, which can be applied to a sensitive method for device asymmetry detection.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.8.1331/_p
Copiar
@ARTICLE{e91-c_8_1331,
author={Toshihiro MATSUDA, Yuya SUGIYAMA, Keita NOHARA, Kazuhiro MORITA, Hideyuki IWATA, Takashi OHZONE, Takayuki MORISHITA, Kiyotaka KOMOKU, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs},
year={2008},
volume={E91-C},
number={8},
pages={1331-1337},
abstract={A test structure to analyze asymmetry and orientation dependence of MOSFETs is presented. n-MOSFETs with 8 different channel orientation and three kinds of process conditions were measured and symmetry characteristics of IDsat and IBmax with respect to the interchange of source and drain was examined. Although both IDsat and IBmax have similar channel orientation dependence, IBmax in interchanged S/D measurements shows asymmetrical characteristics, which can be applied to a sensitive method for device asymmetry detection.},
keywords={},
doi={10.1093/ietele/e91-c.8.1331},
ISSN={1745-1353},
month={August},}
Copiar
TY - JOUR
TI - A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1331
EP - 1337
AU - Toshihiro MATSUDA
AU - Yuya SUGIYAMA
AU - Keita NOHARA
AU - Kazuhiro MORITA
AU - Hideyuki IWATA
AU - Takashi OHZONE
AU - Takayuki MORISHITA
AU - Kiyotaka KOMOKU
PY - 2008
DO - 10.1093/ietele/e91-c.8.1331
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2008
AB - A test structure to analyze asymmetry and orientation dependence of MOSFETs is presented. n-MOSFETs with 8 different channel orientation and three kinds of process conditions were measured and symmetry characteristics of IDsat and IBmax with respect to the interchange of source and drain was examined. Although both IDsat and IBmax have similar channel orientation dependence, IBmax in interchanged S/D measurements shows asymmetrical characteristics, which can be applied to a sensitive method for device asymmetry detection.
ER -