The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Neste artigo, um novo esquema de compensação e uma estrutura de elemento de passagem correspondente para um regulador CMOS de baixa queda (LDO) são apresentados. A abordagem proposta alivia efetivamente a estrita restrição de estabilidade na ESR do capacitor de saída. A estabilidade de um CMOS LDO com a compensação convencional requer a resistência efetiva em série (ESR) do capacitor de saída em uma região semelhante a um túnel. Com a abordagem de projeto proposta, um LDO pode ser estável usando um capacitor de saída sem ESR. Um LDO de 2.5 V/150 mA foi implementado usando um processo CMOS 0.5P1M de 2 µm. Os resultados experimentais ilustram que o LDO proposto é estável com um capacitor de saída de 0.33 µF e sem ESR.
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Hsuan-I PAN, Chern-Lin CHEN, "A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 8, pp. 1356-1364, August 2008, doi: 10.1093/ietele/e91-c.8.1356.
Abstract: In this paper, a new compensation scheme and a corresponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5 V/150 mA LDO has been implemented using a 0.5-µm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33 µF and no ESR.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.8.1356/_p
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@ARTICLE{e91-c_8_1356,
author={Hsuan-I PAN, Chern-Lin CHEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor},
year={2008},
volume={E91-C},
number={8},
pages={1356-1364},
abstract={In this paper, a new compensation scheme and a corresponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5 V/150 mA LDO has been implemented using a 0.5-µm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33 µF and no ESR.},
keywords={},
doi={10.1093/ietele/e91-c.8.1356},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor
T2 - IEICE TRANSACTIONS on Electronics
SP - 1356
EP - 1364
AU - Hsuan-I PAN
AU - Chern-Lin CHEN
PY - 2008
DO - 10.1093/ietele/e91-c.8.1356
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2008
AB - In this paper, a new compensation scheme and a corresponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5 V/150 mA LDO has been implemented using a 0.5-µm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33 µF and no ESR.
ER -