The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
A tecnologia de circuito integrado de ultra-alta velocidade é uma das chaves para alcançar sistemas de comunicação óptica de capacidade ultralarga. Avanços tecnológicos no design de circuitos e embalagens, bem como melhor desempenho do transistor, são necessários para atingir a região operacional acima de 40 Gbit/s. Este artigo descreve um InP HEMT de porta de 0.1 µm, um novo design de circuito e tecnologias de empacotamento de banda larga desenvolvidas para aumentar a velocidade do circuito. Usamos essas tecnologias para fabricar ICs de comunicação por ondas luminosas de 40 Gbit/s. Este artigo também descreve os problemas e desafios da operação de 100 Gbit/s.
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Eiichi SANO, Yasuro YAMANE, "InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 11, pp. 1879-1885, November 1999, doi: .
Abstract: Ultrahigh-speed integrated-circuit technology is one of the keys to achieving ultralarge-capacity optical communication systems. Technological breakthroughs in circuit and packaging design as well as improved transistor performance are needed to reach the over-40-Gbit/s operating region. This paper describes a 0.1-µm gate InP HEMT, novel circuit design, and broadband packaging technologies developed to boost the circuit speed. We used these technologies to make 40-Gbit/s lightwave communication ICs. This paper also describes the problems and challenges toward 100-Gbit/s operation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_1879/_p
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@ARTICLE{e82-c_11_1879,
author={Eiichi SANO, Yasuro YAMANE, },
journal={IEICE TRANSACTIONS on Electronics},
title={InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond},
year={1999},
volume={E82-C},
number={11},
pages={1879-1885},
abstract={Ultrahigh-speed integrated-circuit technology is one of the keys to achieving ultralarge-capacity optical communication systems. Technological breakthroughs in circuit and packaging design as well as improved transistor performance are needed to reach the over-40-Gbit/s operating region. This paper describes a 0.1-µm gate InP HEMT, novel circuit design, and broadband packaging technologies developed to boost the circuit speed. We used these technologies to make 40-Gbit/s lightwave communication ICs. This paper also describes the problems and challenges toward 100-Gbit/s operation.},
keywords={},
doi={},
ISSN={},
month={November},}
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TY - JOUR
TI - InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond
T2 - IEICE TRANSACTIONS on Electronics
SP - 1879
EP - 1885
AU - Eiichi SANO
AU - Yasuro YAMANE
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - Ultrahigh-speed integrated-circuit technology is one of the keys to achieving ultralarge-capacity optical communication systems. Technological breakthroughs in circuit and packaging design as well as improved transistor performance are needed to reach the over-40-Gbit/s operating region. This paper describes a 0.1-µm gate InP HEMT, novel circuit design, and broadband packaging technologies developed to boost the circuit speed. We used these technologies to make 40-Gbit/s lightwave communication ICs. This paper also describes the problems and challenges toward 100-Gbit/s operation.
ER -