The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Uma nova terminação harmônica que controla a forma de onda da corrente de dreno para ser retangular é desenvolvida para módulos amplificadores de potência de alta eficiência. Sua terminação harmônica é um curto-circuito no terceiro harmônico e um não-curto-circuito no segundo harmônico. Foi descoberto experimentalmente e confirmado por simulação que a condição de correspondência de carga no harmônico de terceira ordem melhora a eficiência de um transistor em mais de 13%. Usando este ajuste, 57.7% de eficiência de potência adicionada do módulo é alcançada na potência de saída de 29.9 dBm com ACP de -50 dBc, NACP de -65 dBc a 925 MHz e Vdd de 3.5V.
Akira INOUE
Akira OHTA
Takahiro NAKAMOTO
Shigeki KAGEYAMA
Toshiaki KITANO
Hideaki KATAYAMA
Toshikazu OGATA
Noriyuki TANINO
Kazunao SATO
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Akira INOUE, Akira OHTA, Takahiro NAKAMOTO, Shigeki KAGEYAMA, Toshiaki KITANO, Hideaki KATAYAMA, Toshikazu OGATA, Noriyuki TANINO, Kazunao SATO, "High-Efficiency 0.1 cc Power Amplifier Module for 900 MHz Personal Digital Cellular Telephones" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 11, pp. 1906-1912, November 1999, doi: .
Abstract: A new harmonic termination that controls the waveform of the drain current to be rectangular is developed for high-efficiency power amplifier modules. Its harmonic termination is a short circuit at the third harmonic and a non-short circuit at the second harmonic. It is found experimentally and confirmed by simulation that the load-matching condition at the third-order harmonic improves the efficiency of a transistor by more than 13%. By using this tuning, 57.7% power-added efficiency of the module is achieved at the output power of 29.9 dBm with ACP of -50 dBc, NACP of -65 dBc at 925 MHz and Vdd of 3.5 V.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_1906/_p
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@ARTICLE{e82-c_11_1906,
author={Akira INOUE, Akira OHTA, Takahiro NAKAMOTO, Shigeki KAGEYAMA, Toshiaki KITANO, Hideaki KATAYAMA, Toshikazu OGATA, Noriyuki TANINO, Kazunao SATO, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Efficiency 0.1 cc Power Amplifier Module for 900 MHz Personal Digital Cellular Telephones},
year={1999},
volume={E82-C},
number={11},
pages={1906-1912},
abstract={A new harmonic termination that controls the waveform of the drain current to be rectangular is developed for high-efficiency power amplifier modules. Its harmonic termination is a short circuit at the third harmonic and a non-short circuit at the second harmonic. It is found experimentally and confirmed by simulation that the load-matching condition at the third-order harmonic improves the efficiency of a transistor by more than 13%. By using this tuning, 57.7% power-added efficiency of the module is achieved at the output power of 29.9 dBm with ACP of -50 dBc, NACP of -65 dBc at 925 MHz and Vdd of 3.5 V.},
keywords={},
doi={},
ISSN={},
month={November},}
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TY - JOUR
TI - High-Efficiency 0.1 cc Power Amplifier Module for 900 MHz Personal Digital Cellular Telephones
T2 - IEICE TRANSACTIONS on Electronics
SP - 1906
EP - 1912
AU - Akira INOUE
AU - Akira OHTA
AU - Takahiro NAKAMOTO
AU - Shigeki KAGEYAMA
AU - Toshiaki KITANO
AU - Hideaki KATAYAMA
AU - Toshikazu OGATA
AU - Noriyuki TANINO
AU - Kazunao SATO
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - A new harmonic termination that controls the waveform of the drain current to be rectangular is developed for high-efficiency power amplifier modules. Its harmonic termination is a short circuit at the third harmonic and a non-short circuit at the second harmonic. It is found experimentally and confirmed by simulation that the load-matching condition at the third-order harmonic improves the efficiency of a transistor by more than 13%. By using this tuning, 57.7% power-added efficiency of the module is achieved at the output power of 29.9 dBm with ACP of -50 dBc, NACP of -65 dBc at 925 MHz and Vdd of 3.5 V.
ER -