The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Padrões peculiares de SiO2 contaminação ao redor da periferia do traço de contato causada por vapor de silicone sob comutação no limite de 1.6 W foi confirmada. Para microrrelés, as condições de alimentação elétrica são restritas ao nível inferior. Portanto, é importante verificar o limite superior das condições de energia elétrica para operação normal. O padrão peculiar é importante porque é reconhecido como o primeiro estágio da origem da falha de contato. As causas desse padrão foram discutidas do ponto de vista da distribuição de temperatura no traço de contato, ponte metálica fundida, descarga de microarco e fornecimento de vapor de silicone com oxigênio. Propõe-se que durante os contatos de fechamento, como o aquecimento Joule máximo ocorre na periferia da área de contato real e o vapor de silicone com oxigênio é facilmente fornecido na periferia, SiO2 cresce em torno do traço de contato. Para os contatos de abertura, conforme surge a ponte ou microarco, o vapor de silicone com oxigênio é fornecido apenas fora dos contatos. Assim SiO2 é formado principalmente em torno da periferia do traço. Além disso, SiO2 foi espalhado radialmente dependendo da pulverização catódica do metal fundido sob a ruptura da ponte. Portanto, o padrão peculiar se forma como resultado.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copiar
Terutaka TAMAI, "Peculiar Patterns of SiO2 Contamination on the Contact Surface of a Micro Relay Operated in a Silicone Vapor Environment" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 1, pp. 81-85, January 1999, doi: .
Abstract: Peculiar patterns of SiO2 contamination around the periphery of the contact trace caused by silicone vapor under switching at the boundary of 1.6 W were confirmed. For micro relays, the electrical power conditions are restricted to lower level. Therefore, it is important to ascertain the upper limit of the electrical power conditions for normal operation. The peculiar pattern is important as it is recognized as the first stage of the origination of contact failure. Causes of this pattern were discussed from the viewpoints of temperature distribution in the contact trace, molten metallic bridge, micro arc discharge, and supply of silicone vapor with oxygen. It is proposed that during the closing contacts, as maximum Joule heating occurs at the periphery of the true contact area and silicone vapor with oxygen is easily supplied at the periphery, SiO2 grows around the contact trace. For the opening contacts, as the bridge or micro arc appears, silicone vapor with oxygen is supplied only outside of the contacts. Thus SiO2 is formed mainly around the periphery of the trace. Moreover, SiO2 was scattered radially depending on the sputtering of molten metal under rupture of the bridge. Therefore, the peculiar pattern forms as a result.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_1_81/_p
Copiar
@ARTICLE{e82-c_1_81,
author={Terutaka TAMAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Peculiar Patterns of SiO2 Contamination on the Contact Surface of a Micro Relay Operated in a Silicone Vapor Environment},
year={1999},
volume={E82-C},
number={1},
pages={81-85},
abstract={Peculiar patterns of SiO2 contamination around the periphery of the contact trace caused by silicone vapor under switching at the boundary of 1.6 W were confirmed. For micro relays, the electrical power conditions are restricted to lower level. Therefore, it is important to ascertain the upper limit of the electrical power conditions for normal operation. The peculiar pattern is important as it is recognized as the first stage of the origination of contact failure. Causes of this pattern were discussed from the viewpoints of temperature distribution in the contact trace, molten metallic bridge, micro arc discharge, and supply of silicone vapor with oxygen. It is proposed that during the closing contacts, as maximum Joule heating occurs at the periphery of the true contact area and silicone vapor with oxygen is easily supplied at the periphery, SiO2 grows around the contact trace. For the opening contacts, as the bridge or micro arc appears, silicone vapor with oxygen is supplied only outside of the contacts. Thus SiO2 is formed mainly around the periphery of the trace. Moreover, SiO2 was scattered radially depending on the sputtering of molten metal under rupture of the bridge. Therefore, the peculiar pattern forms as a result.},
keywords={},
doi={},
ISSN={},
month={January},}
Copiar
TY - JOUR
TI - Peculiar Patterns of SiO2 Contamination on the Contact Surface of a Micro Relay Operated in a Silicone Vapor Environment
T2 - IEICE TRANSACTIONS on Electronics
SP - 81
EP - 85
AU - Terutaka TAMAI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1999
AB - Peculiar patterns of SiO2 contamination around the periphery of the contact trace caused by silicone vapor under switching at the boundary of 1.6 W were confirmed. For micro relays, the electrical power conditions are restricted to lower level. Therefore, it is important to ascertain the upper limit of the electrical power conditions for normal operation. The peculiar pattern is important as it is recognized as the first stage of the origination of contact failure. Causes of this pattern were discussed from the viewpoints of temperature distribution in the contact trace, molten metallic bridge, micro arc discharge, and supply of silicone vapor with oxygen. It is proposed that during the closing contacts, as maximum Joule heating occurs at the periphery of the true contact area and silicone vapor with oxygen is easily supplied at the periphery, SiO2 grows around the contact trace. For the opening contacts, as the bridge or micro arc appears, silicone vapor with oxygen is supplied only outside of the contacts. Thus SiO2 is formed mainly around the periphery of the trace. Moreover, SiO2 was scattered radially depending on the sputtering of molten metal under rupture of the bridge. Therefore, the peculiar pattern forms as a result.
ER -