The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Desenvolvemos uma técnica de fabricação para transistores bipolares de heterojunção (HBTs) InP/InGaAs de alto desempenho e alta estabilidade térmica para uso em CIs de 40 Gb/s. A estrutura do eletrodo emissor em forma de T do HBT simplifica o processo de fabricação e permite alta controlabilidade do espaçamento entre o emissor e os eletrodos de base. Uma base altamente dopada com C, cultivada por MBE de fonte de gás, e um novo sistema metálico à base de Pt resulta em uma baixa resistência de base. Um subcoletor InP suprime o desvio térmico de HBTs em altas correntes de coletor melhor do que um subcoletor InGaAs convencional. Usando essas técnicas, fabricamos um HBT de altíssimo desempenho com uma frequência de corte extremamente alta fT de 235 GHz. As medições de RF mostram que a corrente do coletor no pico da frequência de corte é inversamente proporcional à espessura do coletor. Também fabricamos um divisor estático de 1/2 frequência, que pode ser usado para sistemas de transmissão óptica de 40 Gb/s, operando até 44 GHz. Este divisor confirmou que o HBT desenvolvido é aplicável a ICs de transmissão óptica de 40 Gb/s.
Hiroshi MASUDA
Kiyoshi OUCHI
Akihisa TERANO
Hideyuki SUZUKI
Koichi WATANABE
Tohru OKA
Hirokazu MATSUBARA
Tomonori TANOUE
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Hiroshi MASUDA, Kiyoshi OUCHI, Akihisa TERANO, Hideyuki SUZUKI, Koichi WATANABE, Tohru OKA, Hirokazu MATSUBARA, Tomonori TANOUE, "High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 3, pp. 419-427, March 1999, doi: .
Abstract: We have developed a fabrication technique for high-performance high-thermal-stability InP/InGaAs heterojunction bipolar transistors (HBTs) for use in 40-Gb/s ICs. The HBT's T-shaped emitter electrode structure simplifies the fabrication process and enables high controllability of spacing between the emitter and the base electrodes. A highly-C-doped base, grown by gas-source MBE, and a new Pt-based metal system results in a low base resistance. An InP subcollector suppresses thermal runaway of HBTs at high collector current better than a conventional InGaAs subcollector does. Using these techniques, we fabricated a very-high-performance HBT with an extremely high cutoff frequency fT of 235 GHz. The RF measurements show that the collector current at the peak cutoff frequency is inversely proportional to collector thickness. We also fabricated a static 1/2 frequency divider, that can be used for 40-Gb/s optical transmission systems, operating up to 44 GHz. This divider confirmed that the developed HBT is applicable to 40-Gb/s optical transmission ICs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_3_419/_p
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@ARTICLE{e82-c_3_419,
author={Hiroshi MASUDA, Kiyoshi OUCHI, Akihisa TERANO, Hideyuki SUZUKI, Koichi WATANABE, Tohru OKA, Hirokazu MATSUBARA, Tomonori TANOUE, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs},
year={1999},
volume={E82-C},
number={3},
pages={419-427},
abstract={We have developed a fabrication technique for high-performance high-thermal-stability InP/InGaAs heterojunction bipolar transistors (HBTs) for use in 40-Gb/s ICs. The HBT's T-shaped emitter electrode structure simplifies the fabrication process and enables high controllability of spacing between the emitter and the base electrodes. A highly-C-doped base, grown by gas-source MBE, and a new Pt-based metal system results in a low base resistance. An InP subcollector suppresses thermal runaway of HBTs at high collector current better than a conventional InGaAs subcollector does. Using these techniques, we fabricated a very-high-performance HBT with an extremely high cutoff frequency fT of 235 GHz. The RF measurements show that the collector current at the peak cutoff frequency is inversely proportional to collector thickness. We also fabricated a static 1/2 frequency divider, that can be used for 40-Gb/s optical transmission systems, operating up to 44 GHz. This divider confirmed that the developed HBT is applicable to 40-Gb/s optical transmission ICs.},
keywords={},
doi={},
ISSN={},
month={March},}
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TY - JOUR
TI - High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs
T2 - IEICE TRANSACTIONS on Electronics
SP - 419
EP - 427
AU - Hiroshi MASUDA
AU - Kiyoshi OUCHI
AU - Akihisa TERANO
AU - Hideyuki SUZUKI
AU - Koichi WATANABE
AU - Tohru OKA
AU - Hirokazu MATSUBARA
AU - Tomonori TANOUE
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1999
AB - We have developed a fabrication technique for high-performance high-thermal-stability InP/InGaAs heterojunction bipolar transistors (HBTs) for use in 40-Gb/s ICs. The HBT's T-shaped emitter electrode structure simplifies the fabrication process and enables high controllability of spacing between the emitter and the base electrodes. A highly-C-doped base, grown by gas-source MBE, and a new Pt-based metal system results in a low base resistance. An InP subcollector suppresses thermal runaway of HBTs at high collector current better than a conventional InGaAs subcollector does. Using these techniques, we fabricated a very-high-performance HBT with an extremely high cutoff frequency fT of 235 GHz. The RF measurements show that the collector current at the peak cutoff frequency is inversely proportional to collector thickness. We also fabricated a static 1/2 frequency divider, that can be used for 40-Gb/s optical transmission systems, operating up to 44 GHz. This divider confirmed that the developed HBT is applicable to 40-Gb/s optical transmission ICs.
ER -