The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Perfis de fotoemissão induzida por elétrons quentes em n-MOSFETs do tipo LDD com L = 0.35-2.0 µm foram medidos com um microscópio de fotoemissão, que tinha capacidade de 1000
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Toshihiro MATSUDA, Naoko MATSUYAMA, Kiyomi HOSOI, Etsumasa KAMEDA, Takashi OHZONE, "A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 4, pp. 593-601, April 1999, doi: .
Abstract: Profiles of photoemission induced by hot electrons in LDD-type n-MOSFETs with L = 0.35-2.0 µm were measured with a photoemission microscope, which had a capability of 1000
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_4_593/_p
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@ARTICLE{e82-c_4_593,
author={Toshihiro MATSUDA, Naoko MATSUYAMA, Kiyomi HOSOI, Etsumasa KAMEDA, Takashi OHZONE, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs},
year={1999},
volume={E82-C},
number={4},
pages={593-601},
abstract={Profiles of photoemission induced by hot electrons in LDD-type n-MOSFETs with L = 0.35-2.0 µm were measured with a photoemission microscope, which had a capability of 1000
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 593
EP - 601
AU - Toshihiro MATSUDA
AU - Naoko MATSUYAMA
AU - Kiyomi HOSOI
AU - Etsumasa KAMEDA
AU - Takashi OHZONE
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1999
AB - Profiles of photoemission induced by hot electrons in LDD-type n-MOSFETs with L = 0.35-2.0 µm were measured with a photoemission microscope, which had a capability of 1000
ER -