The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nos últimos anos, assistimos a grandes avanços na nossa compreensão e modelagem da difusão acoplada de dopantes e defeitos no silício durante processos de fabricação de circuitos integrados. No entanto, a redução cada vez maior das dimensões e tolerâncias dos dispositivos leva a novos problemas e à necessidade de modelos ainda melhores. Nesta revisão, abordamos alguns dos avanços na compreensão da difusão mediada por defeitos, focando nas equações e parâmetros apropriados para modelagem da difusão de dopantes em estruturas submicrométricas.
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Scott T. DUNHAM, Alp H. GENCER, Srinivasan CHAKRAVARTHI, "Modeling of Dopant Diffusion in Silicon" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 6, pp. 800-812, June 1999, doi: .
Abstract: Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_6_800/_p
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@ARTICLE{e82-c_6_800,
author={Scott T. DUNHAM, Alp H. GENCER, Srinivasan CHAKRAVARTHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Modeling of Dopant Diffusion in Silicon},
year={1999},
volume={E82-C},
number={6},
pages={800-812},
abstract={Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - Modeling of Dopant Diffusion in Silicon
T2 - IEICE TRANSACTIONS on Electronics
SP - 800
EP - 812
AU - Scott T. DUNHAM
AU - Alp H. GENCER
AU - Srinivasan CHAKRAVARTHI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1999
AB - Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.
ER -