The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Um amplificador de potência linear GaAs operando com uma única fonte de 3 V foi desenvolvido para aplicações na banda ISM de 5.8 GHz. Dois tipos de WN refratáriox/W MESFETs de porta autoalinhada, um MESFET de bolso P e um MESFET assimétrico com uma camada p enterrada (BP-MESFET) foram comparados em termos de características DC, características de pequenos sinais e desempenho de potência em 5.8 GHz. Para obter alto ganho e alta eficiência no caso de operação de alimentação única de 3 V a 5.8 GHz, usamos um MESFET de bolso P altamente eficiente e linear para o FET de potência do estágio de saída e um MESFET assimétrico de alto ganho com um enterrado p-layer (BP-MESFET) para o FET do estágio driver. A condição de polarização para o MESFET de bolso P de estágio de saída de 1 mm foi definida próxima à classe AB, de modo a obter potência de saída suficiente com alto PAE. O módulo MMIC amplificador de potência de dois estágios, que pode incluir todos os circuitos de correspondência e polarização, foi projetado e fabricado. O amplificador exibe um alto ganho de potência de 17.9 dB e uma alta eficiência de potência adicionada de 25.7% com uma potência de saída suficiente de 18.7 dBm no ponto de compressão de 1 dB. Esta tecnologia GaAs MESFET de porta autoalinhada é promissora para aplicações de 5.8 GHz em um futuro próximo, devido ao bom desempenho de energia e boa produtividade em massa.
Yoshiko Matsuo IKEDA
Masami NAGAOKA
Hirotsugu WAKIMOTO
Toshiki SESHITA
Masakatsu MIHARA
Misao YOSHIMURA
Yoshikazu TANABE
Keiji OYA
Yoshiaki KITAURA
Naotaka UCHITOMI
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Yoshiko Matsuo IKEDA, Masami NAGAOKA, Hirotsugu WAKIMOTO, Toshiki SESHITA, Masakatsu MIHARA, Misao YOSHIMURA, Yoshikazu TANABE, Keiji OYA, Yoshiaki KITAURA, Naotaka UCHITOMI, "Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 7, pp. 1086-1091, July 1999, doi: .
Abstract: A GaAs linear power amplifier operating with a single 3-V supply has been developed for 5.8-GHz ISM band applications. Two kinds of refractory WNx/W self-aligned gate MESFETs, a P-pocket MESFET and an asymmetric MESFET with a buried p-layer (BP- MESFET ) have been compared in terms of DC characteristics, small signal characteristics and power performances at 5.8 GHz. To obtain both high gain and high efficiency in the case of single 3-V supply operation at 5.8 GHz, we used a highly efficient and linear P-pocket MESFET for the output-stage power FET and a high-gain asymmetric MESFET with a buried p-layer (BP- MESFET ) for the driver-stage FET. The bias condition for 1-mm output-stage P-pocket MESFET was set near class-AB, so as to obtain sufficient output power with high PAE. The two-stage power amplifier MMIC module which can include all matching and biasing circuits, has been designed and fabricated. The amplifier exhibits a high power gain of 17.9 dB and a high power-added efficiency of 25.7% with a sufficient output power of 18.7 dBm at the 1-dB compression point. This self-aligned gate GaAs MESFET technology is promising for near-future 5.8-GHz applications, because of such good power performance and good mass-producibility.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_7_1086/_p
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@ARTICLE{e82-c_7_1086,
author={Yoshiko Matsuo IKEDA, Masami NAGAOKA, Hirotsugu WAKIMOTO, Toshiki SESHITA, Masakatsu MIHARA, Misao YOSHIMURA, Yoshikazu TANABE, Keiji OYA, Yoshiaki KITAURA, Naotaka UCHITOMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications},
year={1999},
volume={E82-C},
number={7},
pages={1086-1091},
abstract={A GaAs linear power amplifier operating with a single 3-V supply has been developed for 5.8-GHz ISM band applications. Two kinds of refractory WNx/W self-aligned gate MESFETs, a P-pocket MESFET and an asymmetric MESFET with a buried p-layer (BP- MESFET ) have been compared in terms of DC characteristics, small signal characteristics and power performances at 5.8 GHz. To obtain both high gain and high efficiency in the case of single 3-V supply operation at 5.8 GHz, we used a highly efficient and linear P-pocket MESFET for the output-stage power FET and a high-gain asymmetric MESFET with a buried p-layer (BP- MESFET ) for the driver-stage FET. The bias condition for 1-mm output-stage P-pocket MESFET was set near class-AB, so as to obtain sufficient output power with high PAE. The two-stage power amplifier MMIC module which can include all matching and biasing circuits, has been designed and fabricated. The amplifier exhibits a high power gain of 17.9 dB and a high power-added efficiency of 25.7% with a sufficient output power of 18.7 dBm at the 1-dB compression point. This self-aligned gate GaAs MESFET technology is promising for near-future 5.8-GHz applications, because of such good power performance and good mass-producibility.},
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1086
EP - 1091
AU - Yoshiko Matsuo IKEDA
AU - Masami NAGAOKA
AU - Hirotsugu WAKIMOTO
AU - Toshiki SESHITA
AU - Masakatsu MIHARA
AU - Misao YOSHIMURA
AU - Yoshikazu TANABE
AU - Keiji OYA
AU - Yoshiaki KITAURA
AU - Naotaka UCHITOMI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1999
AB - A GaAs linear power amplifier operating with a single 3-V supply has been developed for 5.8-GHz ISM band applications. Two kinds of refractory WNx/W self-aligned gate MESFETs, a P-pocket MESFET and an asymmetric MESFET with a buried p-layer (BP- MESFET ) have been compared in terms of DC characteristics, small signal characteristics and power performances at 5.8 GHz. To obtain both high gain and high efficiency in the case of single 3-V supply operation at 5.8 GHz, we used a highly efficient and linear P-pocket MESFET for the output-stage power FET and a high-gain asymmetric MESFET with a buried p-layer (BP- MESFET ) for the driver-stage FET. The bias condition for 1-mm output-stage P-pocket MESFET was set near class-AB, so as to obtain sufficient output power with high PAE. The two-stage power amplifier MMIC module which can include all matching and biasing circuits, has been designed and fabricated. The amplifier exhibits a high power gain of 17.9 dB and a high power-added efficiency of 25.7% with a sufficient output power of 18.7 dBm at the 1-dB compression point. This self-aligned gate GaAs MESFET technology is promising for near-future 5.8-GHz applications, because of such good power performance and good mass-producibility.
ER -