The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Propusemos e fabricamos um novo TFT poli-Si empregando as regiões dopadas seletivamente na camada ativa. Nos TFTs poli-Si propostos, as regiões dopadas seletivamente onde a concentração de dopagem é idêntica à da fonte/dreno reduzem o comprimento efetivo do canal durante o estado ligado. No estado desligado, as regiões dopadas seletivamente podem reduzir o campo elétrico lateral induzido próximo ao dreno e reduzir consideravelmente a corrente de fuga. Os dados experimentais do TFT proposto exibem alta corrente, baixa corrente de fuga e baixa tensão limite. A fabricação do TFT proposto é bastante simples; as etapas necessárias para o TFT proposto são reduzidas porque a implantação de íons de alta dosagem para a fonte/dreno e as regiões dopadas seletivamente é realizada simultaneamente antes da etapa de irradiação com laser excimer.
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Min-Cheol LEE, Jae-Hong JEON, Juhn-Suk YOO, Min-Koo HAN, "New Poly-Si TFT with Selectively Doped Region in the Active Layer" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 10, pp. 1575-1578, October 2000, doi: .
Abstract: We have proposed and fabricated a new poly-Si TFT employing the selectively doped regions in the active layer. In the proposed poly-Si TFTs, the selectively doped regions where doping concentration is identical to that of the source/drain, reduce the effective channel length during the on-state. Under the off-state, the selectively doped regions may reduce the lateral electric field induced near the drain and reduce the leakage current considerably. The experimental data of the proposed TFT exhibit high on-current, low leakage current and low threshold voltage. The fabrication of the proposed TFT is rather simple; the required steps for the proposed TFT are reduced because high dosage ion-implantation for the source/drain and the selectively doped regions is performed simultaneously prior to excimer laser irradiation step.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_10_1575/_p
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@ARTICLE{e83-c_10_1575,
author={Min-Cheol LEE, Jae-Hong JEON, Juhn-Suk YOO, Min-Koo HAN, },
journal={IEICE TRANSACTIONS on Electronics},
title={New Poly-Si TFT with Selectively Doped Region in the Active Layer},
year={2000},
volume={E83-C},
number={10},
pages={1575-1578},
abstract={We have proposed and fabricated a new poly-Si TFT employing the selectively doped regions in the active layer. In the proposed poly-Si TFTs, the selectively doped regions where doping concentration is identical to that of the source/drain, reduce the effective channel length during the on-state. Under the off-state, the selectively doped regions may reduce the lateral electric field induced near the drain and reduce the leakage current considerably. The experimental data of the proposed TFT exhibit high on-current, low leakage current and low threshold voltage. The fabrication of the proposed TFT is rather simple; the required steps for the proposed TFT are reduced because high dosage ion-implantation for the source/drain and the selectively doped regions is performed simultaneously prior to excimer laser irradiation step.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - New Poly-Si TFT with Selectively Doped Region in the Active Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 1575
EP - 1578
AU - Min-Cheol LEE
AU - Jae-Hong JEON
AU - Juhn-Suk YOO
AU - Min-Koo HAN
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2000
AB - We have proposed and fabricated a new poly-Si TFT employing the selectively doped regions in the active layer. In the proposed poly-Si TFTs, the selectively doped regions where doping concentration is identical to that of the source/drain, reduce the effective channel length during the on-state. Under the off-state, the selectively doped regions may reduce the lateral electric field induced near the drain and reduce the leakage current considerably. The experimental data of the proposed TFT exhibit high on-current, low leakage current and low threshold voltage. The fabrication of the proposed TFT is rather simple; the required steps for the proposed TFT are reduced because high dosage ion-implantation for the source/drain and the selectively doped regions is performed simultaneously prior to excimer laser irradiation step.
ER -