The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Estudamos as compensações características em MOSFETs de baixa potência e baixa tensão do ponto de vista do controle back-gate e do fator de efeito corporal. As estruturas MOSFET relatadas anteriormente são classificadas em quatro categorias em termos de estruturas backgate. É mostrado que um MOSFET com polarização reversa fixa tem apenas um acionamento de corrente limitado em baixa tensão, independentemente das estruturas do dispositivo, enquanto o acionamento de corrente de um MOSFET de limiar dinâmico com corpo amarrado à porta é mais aprimorado com o aumento do fator de efeito corporal. Propusemos um novo MOSFET de limiar dinâmico, DTMOS de corpo eletricamente induzido (EIB), que possui um fator de efeito corporal muito grande em baixa tensão de limiar e alta corrente em baixa tensão de alimentação.
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Toshiro HIRAMOTO, Makoto TAKAMIYA, "Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 2, pp. 161-169, February 2000, doi: .
Abstract: We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_2_161/_p
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@ARTICLE{e83-c_2_161,
author={Toshiro HIRAMOTO, Makoto TAKAMIYA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias},
year={2000},
volume={E83-C},
number={2},
pages={161-169},
abstract={We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias
T2 - IEICE TRANSACTIONS on Electronics
SP - 161
EP - 169
AU - Toshiro HIRAMOTO
AU - Makoto TAKAMIYA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2000
AB - We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage.
ER -