The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Uma nova técnica foi desenvolvida para detecção in situ do crescimento de filmes finos. Neste método, uma sonda de fibra óptica é colocada numa posição apropriada numa câmara de deposição, e a película fina acumula-se na extremidade da fibra. Este filme é igual ao do wafer onde ocorre a deposição ou tem uma relação fixa com o filme do wafer. Através da análise da intensidade da luz refletida no filme e guiada pela fibra, podem ser obtidas informações sobre o filme. Com a interferência causando máximos, mínimos e um ponto de inflexão à medida que o filme cresce, é possível obter informações quase em tempo real sobre as seguintes quantidades: as partes real e imaginária do índice de refração do filme, um parâmetro gaussiano que caracteriza a rugosidade da superfície, e a própria espessura do filme. Para demonstrar esta técnica, estudamos a deposição de filmes de nitreto de silício em um reator CVD e como a temperatura do reator e as taxas de fluxo dos reagentes influenciam o crescimento do filme. Esta técnica pode ser aplicada para medir a refletividade in situ de filmes multicamadas, de modo que a refletância em função da temperatura e do tempo possa ser obtida. Como a medição é simples e direta e a informação é óptica, acreditamos que esta técnica tem potencial para suplantar os osciladores de quartzo na medição do crescimento de filmes finos.
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Yifei HE, Brian W. SHELDON, Theodore F. MORSE, "In Situ Fiber Optical Sensor for the Measurement of Thin Films" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 3, pp. 315-325, March 2000, doi: .
Abstract: A novel technique has been developed for in situ sensing of thin film growth. In this method, a fiber optic probe is placed at an appropriate position in a deposition chamber, and the thin film builds up on the end of the fiber. This film is either the same as on the wafer where deposition occurs, or it bears a fixed relationship to the film on the wafer. By an analysis of the intensity of the light reflected from the film and guided by the fiber, information on the film may be obtained. With interference causing maxima, minima and a point of inflection as the film grows, it is possible to obtain near real time information on the following quantities: the real and imaginary parts of the refractive index of the film, a Gaussian parameter characterizing surface roughness, and the film thickness itself. To demonstrate this technique, we have studied the deposition of silicon nitride films in a CVD reactor and how reactor temperature and reactant flow rates influence film growth. This technique may be applied to measure in situ reflectivity of multi layer films, so that reflectance as a function of temperature and time may be obtained. Because the measurement is simple and direct and the information is optical, we believe that this technique has the potential to supplant quartz oscillators in the measurement of thin film growth.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_3_315/_p
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@ARTICLE{e83-c_3_315,
author={Yifei HE, Brian W. SHELDON, Theodore F. MORSE, },
journal={IEICE TRANSACTIONS on Electronics},
title={In Situ Fiber Optical Sensor for the Measurement of Thin Films},
year={2000},
volume={E83-C},
number={3},
pages={315-325},
abstract={A novel technique has been developed for in situ sensing of thin film growth. In this method, a fiber optic probe is placed at an appropriate position in a deposition chamber, and the thin film builds up on the end of the fiber. This film is either the same as on the wafer where deposition occurs, or it bears a fixed relationship to the film on the wafer. By an analysis of the intensity of the light reflected from the film and guided by the fiber, information on the film may be obtained. With interference causing maxima, minima and a point of inflection as the film grows, it is possible to obtain near real time information on the following quantities: the real and imaginary parts of the refractive index of the film, a Gaussian parameter characterizing surface roughness, and the film thickness itself. To demonstrate this technique, we have studied the deposition of silicon nitride films in a CVD reactor and how reactor temperature and reactant flow rates influence film growth. This technique may be applied to measure in situ reflectivity of multi layer films, so that reflectance as a function of temperature and time may be obtained. Because the measurement is simple and direct and the information is optical, we believe that this technique has the potential to supplant quartz oscillators in the measurement of thin film growth.},
keywords={},
doi={},
ISSN={},
month={March},}
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TY - JOUR
TI - In Situ Fiber Optical Sensor for the Measurement of Thin Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 315
EP - 325
AU - Yifei HE
AU - Brian W. SHELDON
AU - Theodore F. MORSE
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2000
AB - A novel technique has been developed for in situ sensing of thin film growth. In this method, a fiber optic probe is placed at an appropriate position in a deposition chamber, and the thin film builds up on the end of the fiber. This film is either the same as on the wafer where deposition occurs, or it bears a fixed relationship to the film on the wafer. By an analysis of the intensity of the light reflected from the film and guided by the fiber, information on the film may be obtained. With interference causing maxima, minima and a point of inflection as the film grows, it is possible to obtain near real time information on the following quantities: the real and imaginary parts of the refractive index of the film, a Gaussian parameter characterizing surface roughness, and the film thickness itself. To demonstrate this technique, we have studied the deposition of silicon nitride films in a CVD reactor and how reactor temperature and reactant flow rates influence film growth. This technique may be applied to measure in situ reflectivity of multi layer films, so that reflectance as a function of temperature and time may be obtained. Because the measurement is simple and direct and the information is optical, we believe that this technique has the potential to supplant quartz oscillators in the measurement of thin film growth.
ER -