The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
As investigações foram realizadas em estruturas de AlGaN/GaN/safira cultivadas em metalorgânico-químico-vapor (MOCVD) usando difratometria de raios X. Enquanto AlGaN com menor fração molar de AlN (<0.1) está sob tensão de compressão no plano, ele está sob tensão de tração no plano com alta fração molar de AlN (> 0.1). Embora a tensão de tração tenha causado rachaduras na camada de AlGaN com alta fração molar de AlN, descobrimos que as rachaduras foram drasticamente reduzidas quando a qualidade da camada de GaN não era boa. Usando esta técnica, fabricamos diodos emissores de superfície de poços multiquânticos GaInN (MQW) em 15 pares de estruturas refletoras de Bragg distribuídas (DBR) AlGaN / GaN. A refletividade de 15 pares de estrutura AlGaN/GaN DBR foi mostrada como 75% a 435 nm. Potência de saída consideravelmente maior (1.5 vezes) foi observada para LED GaInN MQW baseado em DBR quando comparado com estruturas MQW não baseadas em DBR.
Hiroyasu ISHIKAWA
Naoyuki NAKADA
Masaharu NAKAJI
Guang-Yuan ZHAO
Takashi EGAWA
Takashi JIMBO
Masayoshi UMENO
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Hiroyasu ISHIKAWA, Naoyuki NAKADA, Masaharu NAKAJI, Guang-Yuan ZHAO, Takashi EGAWA, Takashi JIMBO, Masayoshi UMENO, "Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 591-597, April 2000, doi: .
Abstract: Investigations were carried out on metalorganic-chemical-vapor-deposition (MOCVD)-grown strained AlGaN/ GaN/sapphire structures using X-ray diffratometry. While AlGaN with lower AlN molar fraction (< 0.1) is under the in-plane compressive stress, it is under the in-plane tensile stress with high AlN molar fraction (> 0.1). Though tensile stress caused the cracks in AlGaN layer with high AlN molar fraction, we found that the cracks dramatically reduced when the GaN layer quality was not good. Using this technique, we fabricated a GaInN multi-quantum-well (MQW) surface emitting diodes were fabricated on 15 pairs of AlGaN/GaN distributed Bragg reflector (DBR) structures. The reflectivity of 15 pairs of AlGaN/GaN DBR structure has been shown as 75% at 435 nm. Considerably higher output power (1.5 times) has been observed for DBR based GaInN MQW LED when compared with non-DBR based MQW structures.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_591/_p
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@ARTICLE{e83-c_4_591,
author={Hiroyasu ISHIKAWA, Naoyuki NAKADA, Masaharu NAKAJI, Guang-Yuan ZHAO, Takashi EGAWA, Takashi JIMBO, Masayoshi UMENO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors},
year={2000},
volume={E83-C},
number={4},
pages={591-597},
abstract={Investigations were carried out on metalorganic-chemical-vapor-deposition (MOCVD)-grown strained AlGaN/ GaN/sapphire structures using X-ray diffratometry. While AlGaN with lower AlN molar fraction (< 0.1) is under the in-plane compressive stress, it is under the in-plane tensile stress with high AlN molar fraction (> 0.1). Though tensile stress caused the cracks in AlGaN layer with high AlN molar fraction, we found that the cracks dramatically reduced when the GaN layer quality was not good. Using this technique, we fabricated a GaInN multi-quantum-well (MQW) surface emitting diodes were fabricated on 15 pairs of AlGaN/GaN distributed Bragg reflector (DBR) structures. The reflectivity of 15 pairs of AlGaN/GaN DBR structure has been shown as 75% at 435 nm. Considerably higher output power (1.5 times) has been observed for DBR based GaInN MQW LED when compared with non-DBR based MQW structures.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors
T2 - IEICE TRANSACTIONS on Electronics
SP - 591
EP - 597
AU - Hiroyasu ISHIKAWA
AU - Naoyuki NAKADA
AU - Masaharu NAKAJI
AU - Guang-Yuan ZHAO
AU - Takashi EGAWA
AU - Takashi JIMBO
AU - Masayoshi UMENO
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - Investigations were carried out on metalorganic-chemical-vapor-deposition (MOCVD)-grown strained AlGaN/ GaN/sapphire structures using X-ray diffratometry. While AlGaN with lower AlN molar fraction (< 0.1) is under the in-plane compressive stress, it is under the in-plane tensile stress with high AlN molar fraction (> 0.1). Though tensile stress caused the cracks in AlGaN layer with high AlN molar fraction, we found that the cracks dramatically reduced when the GaN layer quality was not good. Using this technique, we fabricated a GaInN multi-quantum-well (MQW) surface emitting diodes were fabricated on 15 pairs of AlGaN/GaN distributed Bragg reflector (DBR) structures. The reflectivity of 15 pairs of AlGaN/GaN DBR structure has been shown as 75% at 435 nm. Considerably higher output power (1.5 times) has been observed for DBR based GaInN MQW LED when compared with non-DBR based MQW structures.
ER -