The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
O crescimento epitaxial de feixe molecular excitado por plasma por ressonância de elétron-ciclotron (ECR-MBE) de GaN usando plasma de gás misto hidrogênio-nitrogênio foi investigado. A taxa de crescimento do GaN foi drasticamente aumentada pela adição de hidrogênio ao plasma de nitrogênio. A transição dos padrões de reflexão de difração de elétrons de alta energia (RHEED), de padrões listrados criados sem a presença de hidrogênio para padrões manchados na presença de hidrogênio, indicou que a relação V/III efetiva foi aumentada pela adição de hidrogênio. NHx famílias de radicais foram detectadas em plasma gasoso misto hidrogênio-nitrogênio por espectroscopia de massa quadrupolo e espectroscopia de emissão óptica. Esses radicais foram considerados responsáveis pelo aumento observado na taxa de crescimento. A observação por microscópio eletrônico de transmissão mostrou que a morfologia da superfície do GaN sem hidrogênio era relativamente plana e aquela com hidrogênio era colunar com facetas {1 0 ~ 1 1}. Parece provável que a estrutura colunar das camadas de GaN cultivadas com hidrogênio estivesse fortemente relacionada ao crescimento inicial da ilha.
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Yasuo CHIBA, Tsutomu ARAKI, Yasushi NANISHI, "ECR-MBE Growth of GaN Using Hydrogen-Nitrogen Mixed Gas Plasma" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 627-632, April 2000, doi: .
Abstract: Electron-cyclotron-resonance plasma-excited molecular beam epitaxial (ECR-MBE) growth of GaN using hydrogen-nitrogen mixed gas plasma was investigated. The growth rate of GaN was drastically increased by addition of hydrogen to nitrogen plasma. The transition of reflection high energy electron diffraction (RHEED) patterns, from streaked patterns created without the presence of hydrogen to spotted patterns in the presence of hydrogen, indicated that the effective V/III ratio was increased by the addition of hydrogen. NHx radical families were detected in hydrogen-nitrogen mixed gas plasma by quadrupole mass spectroscopy and optical emission spectroscopy. These radicals were considered to be responsible for the observed increase in growth rate. Transmission electron microscope observation showed that the surface morphology of GaN without hydrogen was relatively flat and that with hydrogen was columnar with {1 0 ~1 1} facets. It seems likely that the columnar structure of the GaN layers grown with hydrogen were strongly related to initial island growth.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_627/_p
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@ARTICLE{e83-c_4_627,
author={Yasuo CHIBA, Tsutomu ARAKI, Yasushi NANISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={ECR-MBE Growth of GaN Using Hydrogen-Nitrogen Mixed Gas Plasma},
year={2000},
volume={E83-C},
number={4},
pages={627-632},
abstract={Electron-cyclotron-resonance plasma-excited molecular beam epitaxial (ECR-MBE) growth of GaN using hydrogen-nitrogen mixed gas plasma was investigated. The growth rate of GaN was drastically increased by addition of hydrogen to nitrogen plasma. The transition of reflection high energy electron diffraction (RHEED) patterns, from streaked patterns created without the presence of hydrogen to spotted patterns in the presence of hydrogen, indicated that the effective V/III ratio was increased by the addition of hydrogen. NHx radical families were detected in hydrogen-nitrogen mixed gas plasma by quadrupole mass spectroscopy and optical emission spectroscopy. These radicals were considered to be responsible for the observed increase in growth rate. Transmission electron microscope observation showed that the surface morphology of GaN without hydrogen was relatively flat and that with hydrogen was columnar with {1 0 ~1 1} facets. It seems likely that the columnar structure of the GaN layers grown with hydrogen were strongly related to initial island growth.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - ECR-MBE Growth of GaN Using Hydrogen-Nitrogen Mixed Gas Plasma
T2 - IEICE TRANSACTIONS on Electronics
SP - 627
EP - 632
AU - Yasuo CHIBA
AU - Tsutomu ARAKI
AU - Yasushi NANISHI
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - Electron-cyclotron-resonance plasma-excited molecular beam epitaxial (ECR-MBE) growth of GaN using hydrogen-nitrogen mixed gas plasma was investigated. The growth rate of GaN was drastically increased by addition of hydrogen to nitrogen plasma. The transition of reflection high energy electron diffraction (RHEED) patterns, from streaked patterns created without the presence of hydrogen to spotted patterns in the presence of hydrogen, indicated that the effective V/III ratio was increased by the addition of hydrogen. NHx radical families were detected in hydrogen-nitrogen mixed gas plasma by quadrupole mass spectroscopy and optical emission spectroscopy. These radicals were considered to be responsible for the observed increase in growth rate. Transmission electron microscope observation showed that the surface morphology of GaN without hydrogen was relatively flat and that with hydrogen was columnar with {1 0 ~1 1} facets. It seems likely that the columnar structure of the GaN layers grown with hydrogen were strongly related to initial island growth.
ER -