The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
As mobilidades dos portadores em filmes fundidos de poli(3-alquiltifeno) foram estudadas por meio da fabricação de um transistor de efeito de campo (FET) na faixa de campo de (0.4-1.6)
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Wee Yee LIM, Shuichi NAGAMATSU, Wataru TAKASHIMA, Takeshi ENDO, Masahiro RIKUKAWA, Keiichi KANETO, "Dependencies of Field Effect Mobility on Regioregularity and Side Chain Length in Poly(Alkylthiophene) Films" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 7, pp. 1071-1075, July 2000, doi: .
Abstract: Carrier mobilities in poly(3-alkylthiphene) cast films have been studied by means of fabricating a field effect transistor (FET) at the field range of (0.4-1.6)
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_7_1071/_p
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@ARTICLE{e83-c_7_1071,
author={Wee Yee LIM, Shuichi NAGAMATSU, Wataru TAKASHIMA, Takeshi ENDO, Masahiro RIKUKAWA, Keiichi KANETO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Dependencies of Field Effect Mobility on Regioregularity and Side Chain Length in Poly(Alkylthiophene) Films},
year={2000},
volume={E83-C},
number={7},
pages={1071-1075},
abstract={Carrier mobilities in poly(3-alkylthiphene) cast films have been studied by means of fabricating a field effect transistor (FET) at the field range of (0.4-1.6)
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Dependencies of Field Effect Mobility on Regioregularity and Side Chain Length in Poly(Alkylthiophene) Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 1071
EP - 1075
AU - Wee Yee LIM
AU - Shuichi NAGAMATSU
AU - Wataru TAKASHIMA
AU - Takeshi ENDO
AU - Masahiro RIKUKAWA
AU - Keiichi KANETO
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2000
AB - Carrier mobilities in poly(3-alkylthiphene) cast films have been studied by means of fabricating a field effect transistor (FET) at the field range of (0.4-1.6)
ER -