The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Uma investigação de primeira ordem dos processos de transporte e perda de energia no dióxido de silício é realizada no âmbito da solução Harmônica Esférica da Equação de Transporte de Boltzmann. O SiO2 A banda de condução é tratada como uma banda esférica e parabólica de vale único. Os mecanismos de espalhamento relevantes são modelados consistentemente: os mecanismos de espalhamento elétron-fônon polares e não polares são considerados. As taxas de dispersão para cada contribuição são analisadas em comparação com os dados de Monte Carlo. Uma série de propriedades macroscópicas de transporte de elétrons em SiO2 são calculados no regime de estado estacionário para uma estrutura em massa homogênea. A investigação mostra uma boa concordância em comparação com experimentos no regime de campo baixo e para diferentes temperaturas.
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Lucia SCOZZOLI, Susanna REGGIANI, Massimo RUDAN, "Homogeneous Transport in Silicon Dioxide Using the Spherical-Harmonics Expansion of the BTE" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 8, pp. 1183-1188, August 2000, doi: .
Abstract: A first-order investigation of the transport and energy-loss processes in silicon dioxide is worked out in the frame of the Spherical-Harmonics solution of the Boltzmann Transport Equation. The SiO2 conduction band is treated as a single-valley spherical and parabolic band. The relevant scattering mechanisms are modeled consistently: both the polar and nonpolar electron-phonon scattering mechanisms are considered. The scattering rates for each contribution are analyzed in comparison with Monte Carlo data. A number of macroscopic transport properties of electrons in SiO2 are worked out in the steady-state regime for a homogeneous bulk structure. The investigation shows a good agreement in comparison with experiments in the low-field regime and for different temperatures.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1183/_p
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@ARTICLE{e83-c_8_1183,
author={Lucia SCOZZOLI, Susanna REGGIANI, Massimo RUDAN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Homogeneous Transport in Silicon Dioxide Using the Spherical-Harmonics Expansion of the BTE},
year={2000},
volume={E83-C},
number={8},
pages={1183-1188},
abstract={A first-order investigation of the transport and energy-loss processes in silicon dioxide is worked out in the frame of the Spherical-Harmonics solution of the Boltzmann Transport Equation. The SiO2 conduction band is treated as a single-valley spherical and parabolic band. The relevant scattering mechanisms are modeled consistently: both the polar and nonpolar electron-phonon scattering mechanisms are considered. The scattering rates for each contribution are analyzed in comparison with Monte Carlo data. A number of macroscopic transport properties of electrons in SiO2 are worked out in the steady-state regime for a homogeneous bulk structure. The investigation shows a good agreement in comparison with experiments in the low-field regime and for different temperatures.},
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - Homogeneous Transport in Silicon Dioxide Using the Spherical-Harmonics Expansion of the BTE
T2 - IEICE TRANSACTIONS on Electronics
SP - 1183
EP - 1188
AU - Lucia SCOZZOLI
AU - Susanna REGGIANI
AU - Massimo RUDAN
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - A first-order investigation of the transport and energy-loss processes in silicon dioxide is worked out in the frame of the Spherical-Harmonics solution of the Boltzmann Transport Equation. The SiO2 conduction band is treated as a single-valley spherical and parabolic band. The relevant scattering mechanisms are modeled consistently: both the polar and nonpolar electron-phonon scattering mechanisms are considered. The scattering rates for each contribution are analyzed in comparison with Monte Carlo data. A number of macroscopic transport properties of electrons in SiO2 are worked out in the steady-state regime for a homogeneous bulk structure. The investigation shows a good agreement in comparison with experiments in the low-field regime and for different temperatures.
ER -