The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Um modelo de contato Schottky foi implementado como condição de contorno para simulações de dispositivos de Monte Carlo. Ao contrário do contato ôhmico ideal, o equilíbrio térmico é desnecessário em torno do contato Schottky. Portanto, a região ampla com alta concentração de impurezas ao redor do contato não é necessária para manter o equilíbrio térmico, o que significa que é possível evitar a atribuição de muitas partículas à região de baixo campo. A validade da presente condição de contorno para contatos foi verificada simulando uma característica retificadora de um diodo de barreira Schottky. Como exemplo de aplicação utilizando o presente modelo de contato, simulamos o transporte em n+nn+ estruturas com comprimentos de canal inferiores a 0.1 µm. Observamos a dependência da direção da dispersão da velocidade do elétron, o que indica que a dependência da direção da constante de difusão ou da temperatura do portador deve ser levada em consideração na simulação hidrodinâmica para dispositivos sub-0.1 µm.
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Kazuya MATSUZAWA, Ken UCHIDA, Akira NISHIYAMA, "Monte Carlo Simulation of Sub-0.1µm Devices with Schottky Contact Model" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 8, pp. 1212-1217, August 2000, doi: .
Abstract: A Schottky contact model was implemented as a boundary condition for Monte Carlo device simulations. Unlike the ideal ohmic contact, the thermal equilibrium is unnecessary around the Schottky contact. Therefore, the wide region with high impurity concentration around the contact is not required to maintain the thermal equilibrium, which means that it is possible to avoid assigning a lot of particles to the low-field region. The validity of the present boundary condition for contacts was verified by simulating a rectifying characteristic of a Schottky barrier diode. As an application example using the present contact model, we simulated transport in n+nn+ structures with sub-0.1 µm channel lengths. We observed direction dependence of the electron velocity dispersion, which indicates that the direction dependence of the diffusion constant or the carrier temperature should be taken into account in the hydrodynamic simulation for sub-0.1 µm devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1212/_p
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@ARTICLE{e83-c_8_1212,
author={Kazuya MATSUZAWA, Ken UCHIDA, Akira NISHIYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Monte Carlo Simulation of Sub-0.1µm Devices with Schottky Contact Model},
year={2000},
volume={E83-C},
number={8},
pages={1212-1217},
abstract={A Schottky contact model was implemented as a boundary condition for Monte Carlo device simulations. Unlike the ideal ohmic contact, the thermal equilibrium is unnecessary around the Schottky contact. Therefore, the wide region with high impurity concentration around the contact is not required to maintain the thermal equilibrium, which means that it is possible to avoid assigning a lot of particles to the low-field region. The validity of the present boundary condition for contacts was verified by simulating a rectifying characteristic of a Schottky barrier diode. As an application example using the present contact model, we simulated transport in n+nn+ structures with sub-0.1 µm channel lengths. We observed direction dependence of the electron velocity dispersion, which indicates that the direction dependence of the diffusion constant or the carrier temperature should be taken into account in the hydrodynamic simulation for sub-0.1 µm devices.},
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - Monte Carlo Simulation of Sub-0.1µm Devices with Schottky Contact Model
T2 - IEICE TRANSACTIONS on Electronics
SP - 1212
EP - 1217
AU - Kazuya MATSUZAWA
AU - Ken UCHIDA
AU - Akira NISHIYAMA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - A Schottky contact model was implemented as a boundary condition for Monte Carlo device simulations. Unlike the ideal ohmic contact, the thermal equilibrium is unnecessary around the Schottky contact. Therefore, the wide region with high impurity concentration around the contact is not required to maintain the thermal equilibrium, which means that it is possible to avoid assigning a lot of particles to the low-field region. The validity of the present boundary condition for contacts was verified by simulating a rectifying characteristic of a Schottky barrier diode. As an application example using the present contact model, we simulated transport in n+nn+ structures with sub-0.1 µm channel lengths. We observed direction dependence of the electron velocity dispersion, which indicates that the direction dependence of the diffusion constant or the carrier temperature should be taken into account in the hydrodynamic simulation for sub-0.1 µm devices.
ER -