The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
É apresentada uma metodologia de análise abrangente que permite a investigação do desempenho de RF de MOSFETs de Si e Si:SiGe tensos. É baseado na simulação Monte Carlo de conjunto transitório que descreve corretamente o transporte de dispositivos e emprega um solucionador de elementos finitos para explicar geometrias complexas de dispositivos. São discutidas características de transferência e valores de mérito para vários MOSFETs de RF existentes e propostos.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copiar
Scott ROY, Sava KAYA, Asen ASENOV, John R. BARKER, "RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 8, pp. 1224-1227, August 2000, doi: .
Abstract: A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1224/_p
Copiar
@ARTICLE{e83-c_8_1224,
author={Scott ROY, Sava KAYA, Asen ASENOV, John R. BARKER, },
journal={IEICE TRANSACTIONS on Electronics},
title={RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation},
year={2000},
volume={E83-C},
number={8},
pages={1224-1227},
abstract={A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed.},
keywords={},
doi={},
ISSN={},
month={August},}
Copiar
TY - JOUR
TI - RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1224
EP - 1227
AU - Scott ROY
AU - Sava KAYA
AU - Asen ASENOV
AU - John R. BARKER
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed.
ER -