The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
SiO2-ferrita Ba adicionada (BaM:SiO2) os filmes foram preparados usando BaFe12Si0.18Ox alvos. BaM:SiO2 filmes exibiram coercividade perpendicular Hc⊥ de mais de 4.2 kOe e razão de quadratura de 0.83, embora a magnetização de saturação Ms diminuiu cerca de 15%. A dependência angular da coercividade Hc e coercividade remanescente Hr foram investigados para explicar o mecanismo de reversão da magnetização. Interações intergranulares nos filmes também foram avaliadas. O modo de reversão de magnetização de filmes de ferrita Ba com e sem SiO2 aditivos não é rotação coerente, mas parece ser o modo de ondulação. A origem da alta coercividade de BaM:SiO2 filmes é diferente daquele dos filmes de ferrita Ba substituídos por Al. Parecia que SiO2 aditivos e os defeitos causados por eles diminuíram Ms e evitou a expansão de domínios invertidos no processo de reversão da magnetização, de forma semelhante a alguns efeitos de fixação, e causou alta Hc⊥ de 4.2-5.1 kOe em BaM:SiO2 filmes.
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Jie FENG, Nobuhiko FUNABASHI, Nobuhiro MATSUSHITA, Shigeki NAKAGAWA, Masahiko NAOE, "Addition of SiO2 to Increase Coercivity and Squareness Ratio of Ba Ferrite Films for Perpendicular Magnetic Recording Media" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 9, pp. 1489-1493, September 2000, doi: .
Abstract: SiO2-added Ba ferrite (BaM:SiO2) films were prepared using BaFe12Si0.18Ox targets. BaM:SiO2 films exhibited perpendicular coercivity Hc⊥ of over 4.2 kOe and squareness ratio of 0.83, although saturation magnetization Ms decreased by about 15%. The angular dependence of coercivity Hc and remanent coercivity Hr were investigated to explain the magnetization reversal mechanism. Intergranular interactions in the films were also evaluated. The magnetization reversal mode of Ba ferrite films with and without SiO2 additives is not coherent rotation but appears to be the curling mode. The origin of the high coercivity of BaM:SiO2 films is different from that of Al-substituted Ba ferrite films. It seemed that SiO2 additives and the defects caused by them decreased Ms and prevented the expansion of reversed domains in the magnetization reversal process, similarly to some pinning effects, and caused high Hc⊥ of 4.2-5.1 kOe in BaM:SiO2 films.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_9_1489/_p
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@ARTICLE{e83-c_9_1489,
author={Jie FENG, Nobuhiko FUNABASHI, Nobuhiro MATSUSHITA, Shigeki NAKAGAWA, Masahiko NAOE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Addition of SiO2 to Increase Coercivity and Squareness Ratio of Ba Ferrite Films for Perpendicular Magnetic Recording Media},
year={2000},
volume={E83-C},
number={9},
pages={1489-1493},
abstract={SiO2-added Ba ferrite (BaM:SiO2) films were prepared using BaFe12Si0.18Ox targets. BaM:SiO2 films exhibited perpendicular coercivity Hc⊥ of over 4.2 kOe and squareness ratio of 0.83, although saturation magnetization Ms decreased by about 15%. The angular dependence of coercivity Hc and remanent coercivity Hr were investigated to explain the magnetization reversal mechanism. Intergranular interactions in the films were also evaluated. The magnetization reversal mode of Ba ferrite films with and without SiO2 additives is not coherent rotation but appears to be the curling mode. The origin of the high coercivity of BaM:SiO2 films is different from that of Al-substituted Ba ferrite films. It seemed that SiO2 additives and the defects caused by them decreased Ms and prevented the expansion of reversed domains in the magnetization reversal process, similarly to some pinning effects, and caused high Hc⊥ of 4.2-5.1 kOe in BaM:SiO2 films.},
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - Addition of SiO2 to Increase Coercivity and Squareness Ratio of Ba Ferrite Films for Perpendicular Magnetic Recording Media
T2 - IEICE TRANSACTIONS on Electronics
SP - 1489
EP - 1493
AU - Jie FENG
AU - Nobuhiko FUNABASHI
AU - Nobuhiro MATSUSHITA
AU - Shigeki NAKAGAWA
AU - Masahiko NAOE
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2000
AB - SiO2-added Ba ferrite (BaM:SiO2) films were prepared using BaFe12Si0.18Ox targets. BaM:SiO2 films exhibited perpendicular coercivity Hc⊥ of over 4.2 kOe and squareness ratio of 0.83, although saturation magnetization Ms decreased by about 15%. The angular dependence of coercivity Hc and remanent coercivity Hr were investigated to explain the magnetization reversal mechanism. Intergranular interactions in the films were also evaluated. The magnetization reversal mode of Ba ferrite films with and without SiO2 additives is not coherent rotation but appears to be the curling mode. The origin of the high coercivity of BaM:SiO2 films is different from that of Al-substituted Ba ferrite films. It seemed that SiO2 additives and the defects caused by them decreased Ms and prevented the expansion of reversed domains in the magnetization reversal process, similarly to some pinning effects, and caused high Hc⊥ of 4.2-5.1 kOe in BaM:SiO2 films.
ER -