The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Transistores de alta mobilidade eletrônica (HEMTs) baseados em InP com comprimentos de porta reduzidos para 30 nm foram fabricados e caracterizados, e o efeito do recesso da porta nas características de alta frequência foi estudado. A frequência de corte, que é considerada como uma função do comprimento da porta e da velocidade média da portadora numa aproximação de primeira ordem, depende do tamanho do recesso da porta quando o comprimento da porta se torna curto. O tamanho do recesso da porta é otimizado levando em consideração a capacitância de feedback e a resistência parasita. Para HEMTs tendo o recesso de porta com uma superfície InP, um alargamento apropriado do recesso de porta fornece uma frequência de corte recorde de 368 GHz para os HEMTs de porta de 30 nm com um canal de rede correspondente.
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Tetsuya SUEMITSU, Tetsuyoshi ISHII, Yasunobu ISHII, "Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1283-1288, October 2001, doi: .
Abstract: InP-based high electron mobility transistors (HEMTs) with gate lengths reduced to 30 nm were fabricated and characterized, and the effect of the gate recess on the high-frequency characteristics was studied. The cutoff frequency, which is regarded as a function of the gate length and the average carrier velocity in a first-order approximation, depends on the size of the gate recess when the gate length becomes short. The size of the gate recess is optimized by taking the feed-back capacitance and the parasitic resistance into account. For HEMTs having the gate recess with an InP surface, an appropriate widening of the gate recess gives a record cutoff frequency of 368 GHz for the 30-nm-gate HEMTs with a lattice-matched channel.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1283/_p
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@ARTICLE{e84-c_10_1283,
author={Tetsuya SUEMITSU, Tetsuyoshi ISHII, Yasunobu ISHII, },
journal={IEICE TRANSACTIONS on Electronics},
title={Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs},
year={2001},
volume={E84-C},
number={10},
pages={1283-1288},
abstract={InP-based high electron mobility transistors (HEMTs) with gate lengths reduced to 30 nm were fabricated and characterized, and the effect of the gate recess on the high-frequency characteristics was studied. The cutoff frequency, which is regarded as a function of the gate length and the average carrier velocity in a first-order approximation, depends on the size of the gate recess when the gate length becomes short. The size of the gate recess is optimized by taking the feed-back capacitance and the parasitic resistance into account. For HEMTs having the gate recess with an InP surface, an appropriate widening of the gate recess gives a record cutoff frequency of 368 GHz for the 30-nm-gate HEMTs with a lattice-matched channel.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1283
EP - 1288
AU - Tetsuya SUEMITSU
AU - Tetsuyoshi ISHII
AU - Yasunobu ISHII
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - InP-based high electron mobility transistors (HEMTs) with gate lengths reduced to 30 nm were fabricated and characterized, and the effect of the gate recess on the high-frequency characteristics was studied. The cutoff frequency, which is regarded as a function of the gate length and the average carrier velocity in a first-order approximation, depends on the size of the gate recess when the gate length becomes short. The size of the gate recess is optimized by taking the feed-back capacitance and the parasitic resistance into account. For HEMTs having the gate recess with an InP surface, an appropriate widening of the gate recess gives a record cutoff frequency of 368 GHz for the 30-nm-gate HEMTs with a lattice-matched channel.
ER -