The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Realizamos um estudo sistemático do impacto da exposição ao hidrogênio em InP HEMTs e GaAs PHEMTs com portas Ti/Pt/Au. O envenenamento por hidrogênio é uma importante preocupação de confiabilidade nesses dispositivos. Nosso trabalho forneceu amplas evidências que apoiam a formação de TiH dentro da estrutura do portão após exposição de HEMTs a um ambiente de hidrogênio. A expansão de volume resultante da porta tensiona a heteroestrutura semicondutora por baixo e, através do efeito piezoelétrico, resulta em uma mudança na tensão limite do dispositivo. Este mecanismo é amplamente reversível. Independentemente disso, descobrimos que H2 perturba a estequiometria da barreira InAlAs exposta na região rebaixada logo ao lado do portão. Isto altera irreversivelmente a concentração extrínseca de portadores de folhas no canal e afeta outras figuras de mérito, como a tensão de ruptura. Esse entendimento deve ser fundamental na identificação de soluções para esse problema em nível de dispositivo.
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Jesus A. del ALAMO, Roxann R. BLANCHARD, Samuel D. MERTENS, "Hydrogen Degradation of InP HEMTs and GaAs PHEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1289-1293, October 2001, doi: .
Abstract: We have carried out a systematic study of the impact of hydrogen exposure on InP HEMTs and GaAs PHEMTs with Ti/Pt/Au gates. Hydrogen poisoning is an important reliability concern in these devices. Our work has provided ample evidence supporting the formation of TiH inside the gate structure upon exposure of HEMTs to a hydrogen environment. The resulting volume expansion of the gate stresses the semiconductor heterostructure underneath and, through the piezoelectric effect, results in a shift of the threshold voltage of the device. This mechanism is largely reversible. Independently of this, we have found that H2 upsets the stoichiometry of the exposed InAlAs barrier in the recessed region right next to the gate. This irreversebly changes the extrinsic sheet carrier concentration in the channel and affects other figures of merit such as the breakdown voltage. This understanding should be instrumental in identifying device-level solutions to this problem.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1289/_p
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@ARTICLE{e84-c_10_1289,
author={Jesus A. del ALAMO, Roxann R. BLANCHARD, Samuel D. MERTENS, },
journal={IEICE TRANSACTIONS on Electronics},
title={Hydrogen Degradation of InP HEMTs and GaAs PHEMTs},
year={2001},
volume={E84-C},
number={10},
pages={1289-1293},
abstract={We have carried out a systematic study of the impact of hydrogen exposure on InP HEMTs and GaAs PHEMTs with Ti/Pt/Au gates. Hydrogen poisoning is an important reliability concern in these devices. Our work has provided ample evidence supporting the formation of TiH inside the gate structure upon exposure of HEMTs to a hydrogen environment. The resulting volume expansion of the gate stresses the semiconductor heterostructure underneath and, through the piezoelectric effect, results in a shift of the threshold voltage of the device. This mechanism is largely reversible. Independently of this, we have found that H2 upsets the stoichiometry of the exposed InAlAs barrier in the recessed region right next to the gate. This irreversebly changes the extrinsic sheet carrier concentration in the channel and affects other figures of merit such as the breakdown voltage. This understanding should be instrumental in identifying device-level solutions to this problem.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Hydrogen Degradation of InP HEMTs and GaAs PHEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1289
EP - 1293
AU - Jesus A. del ALAMO
AU - Roxann R. BLANCHARD
AU - Samuel D. MERTENS
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - We have carried out a systematic study of the impact of hydrogen exposure on InP HEMTs and GaAs PHEMTs with Ti/Pt/Au gates. Hydrogen poisoning is an important reliability concern in these devices. Our work has provided ample evidence supporting the formation of TiH inside the gate structure upon exposure of HEMTs to a hydrogen environment. The resulting volume expansion of the gate stresses the semiconductor heterostructure underneath and, through the piezoelectric effect, results in a shift of the threshold voltage of the device. This mechanism is largely reversible. Independently of this, we have found that H2 upsets the stoichiometry of the exposed InAlAs barrier in the recessed region right next to the gate. This irreversebly changes the extrinsic sheet carrier concentration in the channel and affects other figures of merit such as the breakdown voltage. This understanding should be instrumental in identifying device-level solutions to this problem.
ER -