The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Um novo transistor pseudomórfico de alta mobilidade eletrônica (PHEMT) de porta isolada InGaAs / InAlAs (IG) com uma camada de controle de interface de silício (Si ICL) é fabricado e caracterizado com sucesso. Esforços sistemáticos para caracterizar e otimizar a estrutura da porta isolada e o processo de fabricação do PHEMT foram feitos usando no local Espectroscopia de fotoelétrons de raios X (XPS) e capacitância-tensão (cv) técnicas. Isso levou à fabricação bem-sucedida de um novo IG-PHEMT mostrando excelentes características DC estáveis com um bom pinçamento e uma alta transcondutância (177 mS/mm), correntes de fuga de porta muito pequenas, tensões de ruptura de porta muito altas (cerca de 40 V) e respeitáveis Características de RF fT = 9 GHz e fmax=38GHz.
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Yong-Gui XIE, Seiya KASAI, Hiroshi TAKAHASHI, Chao JIANG, Hideki HASEGAWA, "Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HEMTs Having a Silicon Interface Control Layer" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1335-1343, October 2001, doi: .
Abstract: A novel InGaAs/InAlAs insulated gate (IG) pseudomorphic high electron mobility transistor (PHEMT) having a silicon interface control layer (Si ICL) is successfully fabricated and characterized. Systematic efforts to characterize and optimize the insulated gate structure and the PHEMT fabrication process were made by using in-situ X-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) techniques. This led to successful fabrication of a novel IG-PHEMT showing excellent stable DC characteristics with a good pinch off and a high transconductance (177 mS/mm), very small gate leakage currents, very high gate breakdown voltages (about 40 V) and respectable RF characteristics fT = 9 GHz and fmax=38 GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1335/_p
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@ARTICLE{e84-c_10_1335,
author={Yong-Gui XIE, Seiya KASAI, Hiroshi TAKAHASHI, Chao JIANG, Hideki HASEGAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HEMTs Having a Silicon Interface Control Layer},
year={2001},
volume={E84-C},
number={10},
pages={1335-1343},
abstract={A novel InGaAs/InAlAs insulated gate (IG) pseudomorphic high electron mobility transistor (PHEMT) having a silicon interface control layer (Si ICL) is successfully fabricated and characterized. Systematic efforts to characterize and optimize the insulated gate structure and the PHEMT fabrication process were made by using in-situ X-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) techniques. This led to successful fabrication of a novel IG-PHEMT showing excellent stable DC characteristics with a good pinch off and a high transconductance (177 mS/mm), very small gate leakage currents, very high gate breakdown voltages (about 40 V) and respectable RF characteristics fT = 9 GHz and fmax=38 GHz.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HEMTs Having a Silicon Interface Control Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 1335
EP - 1343
AU - Yong-Gui XIE
AU - Seiya KASAI
AU - Hiroshi TAKAHASHI
AU - Chao JIANG
AU - Hideki HASEGAWA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - A novel InGaAs/InAlAs insulated gate (IG) pseudomorphic high electron mobility transistor (PHEMT) having a silicon interface control layer (Si ICL) is successfully fabricated and characterized. Systematic efforts to characterize and optimize the insulated gate structure and the PHEMT fabrication process were made by using in-situ X-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) techniques. This led to successful fabrication of a novel IG-PHEMT showing excellent stable DC characteristics with a good pinch off and a high transconductance (177 mS/mm), very small gate leakage currents, very high gate breakdown voltages (about 40 V) and respectable RF characteristics fT = 9 GHz and fmax=38 GHz.
ER -