The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
A confiabilidade a longo prazo do transistor bipolar de heterojunção (HBT) continua a ser um assunto de grande interesse devido à crescente aceitação deste dispositivo em uma ampla gama de aplicações. Os requisitos mais exigentes para confiabilidade a longo prazo incluem instrumentação de micro-ondas de alto desempenho, radar de banda X e comunicação por ondas luminosas (OC-192). Um salto significativo no desempenho de confiabilidade a longo prazo foi observado no HBT à medida que o material emissor AlGaAs foi substituído por InGaP compatível com rede. Uma melhoria dramática na confiabilidade de longo prazo também foi observada nos HBTs emissores de AlGaAs conforme a tensão de ativação (Vbe) foi reduzido. O mecanismo de falha típico em dispositivos HBT em alta densidade de corrente e testes de confiabilidade de longo prazo em alta temperatura foi um aumento dramático na corrente de base em baixas densidades de corrente. Um dos fatores limitantes na obtenção do MTTF no InGaP HBT foi o longo tempo necessário para promover falhas no dispositivo HBT. Além disso, é necessário um grande tamanho de amostra para extrair um MTTF confiável. Aumentos significativos na densidade de corrente tão alta quanto 180 kA/cm2 durante o teste de confiabilidade foi usado para promover falhas a fim de obter um MTTF dentro de um período de tempo razoável. O MTTF a uma temperatura de junção de 334
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Noren PAN, Roger E. WELSER, Kevin S. STEVENS, Charles R. LUTZ, "Reliability of InGaP and AlGaAs HBT" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1366-1372, October 2001, doi: .
Abstract: The long-term reliability of heterojunction bipolar transistor (HBT) continues to be a subject of great interest due to the increased acceptance of this device in a wide range of applications. The most demanding requirements for long-term reliability include high performance microwave instrumentation, X-band radar, and lightwave communication (OC-192). A significant leap in the long-term reliability performance was observed in HBT as the AlGaAs emitter material was replaced with lattice matched InGaP. A dramatic improvement in the long-term reliability was also observed in AlGaAs emitter HBT's as the turn on voltage (Vbe) was lowered. The typical failure mechanism in HBT devices at high current density and high temperature long-term reliability testing was a dramatic increase in the base current at low current densities. One of the limiting factors in obtaining MTTF in InGaP HBT was the long time required to promote failures in the HBT device. Furthermore, a large sample size is necessary to extract a reliable MTTF. Significant increases in the current density as high as 180 kA/cm2 during reliability testing was used to promote failures in order to obtain an MTTF within a reasonable amount of time. The MTTF at a junction temperature of 334
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1366/_p
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@ARTICLE{e84-c_10_1366,
author={Noren PAN, Roger E. WELSER, Kevin S. STEVENS, Charles R. LUTZ, },
journal={IEICE TRANSACTIONS on Electronics},
title={Reliability of InGaP and AlGaAs HBT},
year={2001},
volume={E84-C},
number={10},
pages={1366-1372},
abstract={The long-term reliability of heterojunction bipolar transistor (HBT) continues to be a subject of great interest due to the increased acceptance of this device in a wide range of applications. The most demanding requirements for long-term reliability include high performance microwave instrumentation, X-band radar, and lightwave communication (OC-192). A significant leap in the long-term reliability performance was observed in HBT as the AlGaAs emitter material was replaced with lattice matched InGaP. A dramatic improvement in the long-term reliability was also observed in AlGaAs emitter HBT's as the turn on voltage (Vbe) was lowered. The typical failure mechanism in HBT devices at high current density and high temperature long-term reliability testing was a dramatic increase in the base current at low current densities. One of the limiting factors in obtaining MTTF in InGaP HBT was the long time required to promote failures in the HBT device. Furthermore, a large sample size is necessary to extract a reliable MTTF. Significant increases in the current density as high as 180 kA/cm2 during reliability testing was used to promote failures in order to obtain an MTTF within a reasonable amount of time. The MTTF at a junction temperature of 334
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Reliability of InGaP and AlGaAs HBT
T2 - IEICE TRANSACTIONS on Electronics
SP - 1366
EP - 1372
AU - Noren PAN
AU - Roger E. WELSER
AU - Kevin S. STEVENS
AU - Charles R. LUTZ
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - The long-term reliability of heterojunction bipolar transistor (HBT) continues to be a subject of great interest due to the increased acceptance of this device in a wide range of applications. The most demanding requirements for long-term reliability include high performance microwave instrumentation, X-band radar, and lightwave communication (OC-192). A significant leap in the long-term reliability performance was observed in HBT as the AlGaAs emitter material was replaced with lattice matched InGaP. A dramatic improvement in the long-term reliability was also observed in AlGaAs emitter HBT's as the turn on voltage (Vbe) was lowered. The typical failure mechanism in HBT devices at high current density and high temperature long-term reliability testing was a dramatic increase in the base current at low current densities. One of the limiting factors in obtaining MTTF in InGaP HBT was the long time required to promote failures in the HBT device. Furthermore, a large sample size is necessary to extract a reliable MTTF. Significant increases in the current density as high as 180 kA/cm2 during reliability testing was used to promote failures in order to obtain an MTTF within a reasonable amount of time. The MTTF at a junction temperature of 334
ER -