The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Relatamos aqui as características elétricas e estruturais dos DHBTs InGaP/GaInAsN com uma redução de até 50 mV na tensão de ativação em relação aos HBTs InGaP/GaAs padrão. Altos níveis de doping do tipo p (
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Roger E. WELSER, Paul M. DELUCA, Alexander C. WANG, Noren PAN, "Low Vbe GaInAsN Base Heterojunction Bipolar Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1389-1393, October 2001, doi: .
Abstract: We report here on the electrical and structural characteristics of InGaP/GaInAsN DHBTs with up to a 50 mV reduction in turn-on voltage relative to standard InGaP/GaAs HBTs. High p-type doping levels (
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1389/_p
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@ARTICLE{e84-c_10_1389,
author={Roger E. WELSER, Paul M. DELUCA, Alexander C. WANG, Noren PAN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Vbe GaInAsN Base Heterojunction Bipolar Transistors},
year={2001},
volume={E84-C},
number={10},
pages={1389-1393},
abstract={We report here on the electrical and structural characteristics of InGaP/GaInAsN DHBTs with up to a 50 mV reduction in turn-on voltage relative to standard InGaP/GaAs HBTs. High p-type doping levels (
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Low Vbe GaInAsN Base Heterojunction Bipolar Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 1389
EP - 1393
AU - Roger E. WELSER
AU - Paul M. DELUCA
AU - Alexander C. WANG
AU - Noren PAN
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - We report here on the electrical and structural characteristics of InGaP/GaInAsN DHBTs with up to a 50 mV reduction in turn-on voltage relative to standard InGaP/GaAs HBTs. High p-type doping levels (
ER -