The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Relatamos o fluxo do processo e as características tecnológicas da tecnologia bipolar de 75 GHz da Infineons, que é caracterizada por uma estrutura de transistor autoalinhado duplo-poli e uma base SiGe, cultivada por epitaxia seletiva. A dependência da deposição epitaxial nas condições de crescimento e a influência do layout no processo de crescimento é discutida, especialmente para diferentes tipos de retículos: CIs bipolares, CIs BICMOS e semicondutores discretos. Finalmente, nosso conceito de monitoramento para o controle da epitaxia seletiva de SiGe é apresentado e comparado com métodos alternativos de controle de processo.
Konrad WOLF
Wolfgang KLEIN
Norbert ELBEL
Adrian BERTHOLD
Sonja GRONDAHL
Thomas HUTTNER
Stefan DREXL
Rudolf LACHNER
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Konrad WOLF, Wolfgang KLEIN, Norbert ELBEL, Adrian BERTHOLD, Sonja GRONDAHL, Thomas HUTTNER, Stefan DREXL, Rudolf LACHNER, "SiGe-HBTs for Bipolar and BICMOS-Applications: From Research to Ramp up of Production" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1399-1407, October 2001, doi: .
Abstract: We report the process flow and technological features of Infineons' 75 GHz bipolar technology, which is characterized by a double-poly self-aligned transistor structure and a SiGe base, grown by selective epitaxy. The dependence of the epitaxial deposition on growth conditions and the influence of layout on the growth process is discussed, especially for different kinds of reticles: bipolar-ICs, BICMOS-ICs and discrete semiconductors. Finally, our monitoring concept for the control of the selective SiGe epitaxy is presented and compared with alternative methods of process control.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1399/_p
Copiar
@ARTICLE{e84-c_10_1399,
author={Konrad WOLF, Wolfgang KLEIN, Norbert ELBEL, Adrian BERTHOLD, Sonja GRONDAHL, Thomas HUTTNER, Stefan DREXL, Rudolf LACHNER, },
journal={IEICE TRANSACTIONS on Electronics},
title={SiGe-HBTs for Bipolar and BICMOS-Applications: From Research to Ramp up of Production},
year={2001},
volume={E84-C},
number={10},
pages={1399-1407},
abstract={We report the process flow and technological features of Infineons' 75 GHz bipolar technology, which is characterized by a double-poly self-aligned transistor structure and a SiGe base, grown by selective epitaxy. The dependence of the epitaxial deposition on growth conditions and the influence of layout on the growth process is discussed, especially for different kinds of reticles: bipolar-ICs, BICMOS-ICs and discrete semiconductors. Finally, our monitoring concept for the control of the selective SiGe epitaxy is presented and compared with alternative methods of process control.},
keywords={},
doi={},
ISSN={},
month={October},}
Copiar
TY - JOUR
TI - SiGe-HBTs for Bipolar and BICMOS-Applications: From Research to Ramp up of Production
T2 - IEICE TRANSACTIONS on Electronics
SP - 1399
EP - 1407
AU - Konrad WOLF
AU - Wolfgang KLEIN
AU - Norbert ELBEL
AU - Adrian BERTHOLD
AU - Sonja GRONDAHL
AU - Thomas HUTTNER
AU - Stefan DREXL
AU - Rudolf LACHNER
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - We report the process flow and technological features of Infineons' 75 GHz bipolar technology, which is characterized by a double-poly self-aligned transistor structure and a SiGe base, grown by selective epitaxy. The dependence of the epitaxial deposition on growth conditions and the influence of layout on the growth process is discussed, especially for different kinds of reticles: bipolar-ICs, BICMOS-ICs and discrete semiconductors. Finally, our monitoring concept for the control of the selective SiGe epitaxy is presented and compared with alternative methods of process control.
ER -