The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Este artigo descreve a análise numérica das propriedades de oscilação/detecção de ondas eletromagnéticas terahertz de transistores de efeito de campo de ondas de plasma (PW-FETs) e suas aplicações em futuros sistemas de redes fotônicas inteligentes. O PW-FET é um novo tipo de dispositivo eletrônico que utiliza o efeito de ressonância de plasma de elétrons de condução bidimensionais altamente densos no canal FET. Ao resolver numericamente as equações hidrodinâmicas para PW-FETs, as características de ressonância do plasma sob absorção de ondas eletromagnéticas terahertz são analisadas para três tipos de FETs; MOSFETs de Si, MESFETs de GaAs e HEMTs baseados em InP. Os resultados indicam que os HEMTs de comprimento de porta sub-100 nm baseados em InP exibem as características de oscilação/detecção mais promissoras na faixa de terahertz com sintonização de frequência muito ampla. Ao introduzir os PW-FETs como osciladores sintonizáveis com frequência terahertz bloqueados por injeção e misturadores terahertz, uma nova idéia de detecção heteródina coerente utilizando bandas terahertz IF (frequência intermediária) é proposta para os futuros sistemas de redes fotônicas inteligentes que permitem tempo real roteamento de comprimento de onda adaptativo para multiplexação add-drop. A ressonância plasmática de PW-FETs por meio de geração de diferentes frequências baseada em fotomistura direta também é proposta como uma abordagem alternativa à oscilação de terahertz bloqueada por injeção. Para realizá-lo, excitações de portadoras virtuais pelo polariton com energia de fóton inferior ao bandgap do canal são um mecanismo possível.
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Taiichi OTSUJI, Shin NAKAE, Hajime KITAMURA, "Numerical Analysis for Resonance Properties of Plasma-Wave Field-Effect Transistors and Their Terahertz Applications to Smart Photonic Network Systems" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1470-1476, October 2001, doi: .
Abstract: This paper describes the numerical analysis for terahertz electromagnetic-wave oscillation/detection properties of plasma-wave field-effect transistors (PW-FET's) and their applications to future smart photonic network systems. The PW-FET is a new type of the electron device that utilizes the plasma resonance effect of highly dense two-dimensional conduction electrons in the FET channel. By numerically solving the hydrodynamic equations for PW-FET's, the plasma resonance characteristics under terahertz electromagnetic-wave absorption are analyzed for three types of FET's; Si MOSFET's, GaAs MESFET's, and InP-based HEMT's. The results indicate that the InP-based sub-100-nm gate-length HEMT's exhibit the most promising oscillation/detection characteristics in the terahertz range with very wide frequency tunability. By introducing the PW-FET's as injection-locked terahertz-frequency-tunable oscillators and terahertz mixers, a new idea of coherent heterodyne detection utilizing terahertz IF (intermediate-frequency) bands is proposed for the future smart photonic network systems that enable real-time adaptive wavelength routing for add-drop multiplexing. The plasma resonance of PW-FET's by means of different frequency generation based on direct photomixing is also proposed as an alternative approach to injection-locked terahertz oscillation. To realize it, virtual carrier excitations by the polariton having photon energy lower than the bandgap of the channel is a possible mechanism.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1470/_p
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@ARTICLE{e84-c_10_1470,
author={Taiichi OTSUJI, Shin NAKAE, Hajime KITAMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Numerical Analysis for Resonance Properties of Plasma-Wave Field-Effect Transistors and Their Terahertz Applications to Smart Photonic Network Systems},
year={2001},
volume={E84-C},
number={10},
pages={1470-1476},
abstract={This paper describes the numerical analysis for terahertz electromagnetic-wave oscillation/detection properties of plasma-wave field-effect transistors (PW-FET's) and their applications to future smart photonic network systems. The PW-FET is a new type of the electron device that utilizes the plasma resonance effect of highly dense two-dimensional conduction electrons in the FET channel. By numerically solving the hydrodynamic equations for PW-FET's, the plasma resonance characteristics under terahertz electromagnetic-wave absorption are analyzed for three types of FET's; Si MOSFET's, GaAs MESFET's, and InP-based HEMT's. The results indicate that the InP-based sub-100-nm gate-length HEMT's exhibit the most promising oscillation/detection characteristics in the terahertz range with very wide frequency tunability. By introducing the PW-FET's as injection-locked terahertz-frequency-tunable oscillators and terahertz mixers, a new idea of coherent heterodyne detection utilizing terahertz IF (intermediate-frequency) bands is proposed for the future smart photonic network systems that enable real-time adaptive wavelength routing for add-drop multiplexing. The plasma resonance of PW-FET's by means of different frequency generation based on direct photomixing is also proposed as an alternative approach to injection-locked terahertz oscillation. To realize it, virtual carrier excitations by the polariton having photon energy lower than the bandgap of the channel is a possible mechanism.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Numerical Analysis for Resonance Properties of Plasma-Wave Field-Effect Transistors and Their Terahertz Applications to Smart Photonic Network Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 1470
EP - 1476
AU - Taiichi OTSUJI
AU - Shin NAKAE
AU - Hajime KITAMURA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - This paper describes the numerical analysis for terahertz electromagnetic-wave oscillation/detection properties of plasma-wave field-effect transistors (PW-FET's) and their applications to future smart photonic network systems. The PW-FET is a new type of the electron device that utilizes the plasma resonance effect of highly dense two-dimensional conduction electrons in the FET channel. By numerically solving the hydrodynamic equations for PW-FET's, the plasma resonance characteristics under terahertz electromagnetic-wave absorption are analyzed for three types of FET's; Si MOSFET's, GaAs MESFET's, and InP-based HEMT's. The results indicate that the InP-based sub-100-nm gate-length HEMT's exhibit the most promising oscillation/detection characteristics in the terahertz range with very wide frequency tunability. By introducing the PW-FET's as injection-locked terahertz-frequency-tunable oscillators and terahertz mixers, a new idea of coherent heterodyne detection utilizing terahertz IF (intermediate-frequency) bands is proposed for the future smart photonic network systems that enable real-time adaptive wavelength routing for add-drop multiplexing. The plasma resonance of PW-FET's by means of different frequency generation based on direct photomixing is also proposed as an alternative approach to injection-locked terahertz oscillation. To realize it, virtual carrier excitations by the polariton having photon energy lower than the bandgap of the channel is a possible mechanism.
ER -