The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
SrTiO epitaxial3O filme (STO) em (Ti,Al)N/Si(100) epitaxial foi obtido com sucesso usando uma camada tampão de Ti. O SrTiO3 o filme foi (100) orientado e cresceu em relação epitaxial paralela (cubo sobre cubo), ou seja, (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110>Si. A camada tampão de Ti foi cultivada em (Ti,Al)N por pulverização catódica com magnetron, e a espessura da camada tampão foi de 2-10 nm. Depois que o filme STO foi pulverizado, a camada tampão de Ti foi alterada para anatase policristalina-TiO2.
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Kenya SANO, Ryoichi OHARA, Takashi KAWAKUBO, "Growth of Epitaxial SrTiO3 on Epitaxial (Ti,Al)N/Si(100) Substrate Using Ti-Buffer Layer" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 808-813, June 2001, doi: .
Abstract: Epitaxial SrTiO3(STO) film on epitaxial (Ti,Al)N/Si(100) was successfully obtained using a Ti-buffer layer. The SrTiO3 film was (100) oriented and grew in parallel epitaxial relationship (cube-on-cube), i.e., (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. The Ti-buffer layer was grown on (Ti,Al)N by magnetron sputtering, and the thickness of the buffer layer was 2-10 nm. After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO2.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_808/_p
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@ARTICLE{e84-c_6_808,
author={Kenya SANO, Ryoichi OHARA, Takashi KAWAKUBO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Growth of Epitaxial SrTiO3 on Epitaxial (Ti,Al)N/Si(100) Substrate Using Ti-Buffer Layer},
year={2001},
volume={E84-C},
number={6},
pages={808-813},
abstract={Epitaxial SrTiO3(STO) film on epitaxial (Ti,Al)N/Si(100) was successfully obtained using a Ti-buffer layer. The SrTiO3 film was (100) oriented and grew in parallel epitaxial relationship (cube-on-cube), i.e., (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. The Ti-buffer layer was grown on (Ti,Al)N by magnetron sputtering, and the thickness of the buffer layer was 2-10 nm. After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO2.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - Growth of Epitaxial SrTiO3 on Epitaxial (Ti,Al)N/Si(100) Substrate Using Ti-Buffer Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 808
EP - 813
AU - Kenya SANO
AU - Ryoichi OHARA
AU - Takashi KAWAKUBO
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - Epitaxial SrTiO3(STO) film on epitaxial (Ti,Al)N/Si(100) was successfully obtained using a Ti-buffer layer. The SrTiO3 film was (100) oriented and grew in parallel epitaxial relationship (cube-on-cube), i.e., (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. The Ti-buffer layer was grown on (Ti,Al)N by magnetron sputtering, and the thickness of the buffer layer was 2-10 nm. After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO2.
ER -