The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
A linearidade do amplificador de potência GaAs Field Effect Transistor (FET) é muito influenciada pelas características não lineares da capacitância porta-fonte (Cgs) e corrente de fonte de drenagem (Ids) para os FETs. No entanto, os métodos de análise sugeridos anteriormente da não linearidade do GaAs FET concentram-se principalmente nas investigações de cada componente não linear individual (Cgs or Ids) sem considerar ambos os efeitos não lineares. Analisamos com mais precisão a não linearidade dos FETs de GaAs considerando os efeitos não lineares de Cgs e Ids simultaneamente. Também investigamos a distorção de intermodulação de terceira ordem (IMD3) do GaAs FET em relação às impedâncias de fonte e carga que minimizam as não linearidades do FET. A partir dos resultados da simulação pela técnica da série Volterra, mostramos que o mínimo IMD3 é encontrado na resistência mínima da fonte (RS) e resistência máxima à carga (RL) na potência de saída equivalente (PFora) contorno. Os resultados simulados são comparados com os dados pull de carga e origem, com boa concordância.
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Kwang-Ho AHN, Soong-Hak LEE, Yoon-Ha JEONG, "Effects of Source and Load Impedance on the Intermodulation Distortion Products of GaAs FETs" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 8, pp. 1104-1110, August 2001, doi: .
Abstract: The linearity of the GaAs Field Effect Transistor (FET) power amplifier is greatly influenced by the nonlinear characteristics of gate-source capacitance (Cgs) and drain-source current (Ids) for the FETs. However, previously suggested analysis methods of GaAs FET non-linearity are mainly focused on the investigations by each individual non-linear component (Cgs or Ids) without considering both non-linear effects. We analyze more accurately the non-linearity of GaAs FETs by considering non-linear effects of Cgs and Ids simultaneously. We also investigate the third-order intermodulation distortion (IMD3) of the GaAs FET in relation to source and load impedances that minimize FET non-linearities. From the simulation results by Volterra-series technique, we show that the least IMD3 is found at the minimum source resistance (RS) and maximum load resistance (RL) in the equivalent output power (Pout) contour. Simulated results are compared with the load and source pull data, with good agreement.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_8_1104/_p
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@ARTICLE{e84-c_8_1104,
author={Kwang-Ho AHN, Soong-Hak LEE, Yoon-Ha JEONG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of Source and Load Impedance on the Intermodulation Distortion Products of GaAs FETs},
year={2001},
volume={E84-C},
number={8},
pages={1104-1110},
abstract={The linearity of the GaAs Field Effect Transistor (FET) power amplifier is greatly influenced by the nonlinear characteristics of gate-source capacitance (Cgs) and drain-source current (Ids) for the FETs. However, previously suggested analysis methods of GaAs FET non-linearity are mainly focused on the investigations by each individual non-linear component (Cgs or Ids) without considering both non-linear effects. We analyze more accurately the non-linearity of GaAs FETs by considering non-linear effects of Cgs and Ids simultaneously. We also investigate the third-order intermodulation distortion (IMD3) of the GaAs FET in relation to source and load impedances that minimize FET non-linearities. From the simulation results by Volterra-series technique, we show that the least IMD3 is found at the minimum source resistance (RS) and maximum load resistance (RL) in the equivalent output power (Pout) contour. Simulated results are compared with the load and source pull data, with good agreement.},
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - Effects of Source and Load Impedance on the Intermodulation Distortion Products of GaAs FETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1104
EP - 1110
AU - Kwang-Ho AHN
AU - Soong-Hak LEE
AU - Yoon-Ha JEONG
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2001
AB - The linearity of the GaAs Field Effect Transistor (FET) power amplifier is greatly influenced by the nonlinear characteristics of gate-source capacitance (Cgs) and drain-source current (Ids) for the FETs. However, previously suggested analysis methods of GaAs FET non-linearity are mainly focused on the investigations by each individual non-linear component (Cgs or Ids) without considering both non-linear effects. We analyze more accurately the non-linearity of GaAs FETs by considering non-linear effects of Cgs and Ids simultaneously. We also investigate the third-order intermodulation distortion (IMD3) of the GaAs FET in relation to source and load impedances that minimize FET non-linearities. From the simulation results by Volterra-series technique, we show that the least IMD3 is found at the minimum source resistance (RS) and maximum load resistance (RL) in the equivalent output power (Pout) contour. Simulated results are compared with the load and source pull data, with good agreement.
ER -