The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Fabricamos um protótipo de dispositivos de interface entre circuitos SFQ e CMOS usando dispositivos de injeção de quase-partículas HTS. Pela injeção de quase-partículas, a área da ponte torna-se resistiva e surge alta tensão no eletrodo de drenagem. Como teste de funcionamento do dispositivo, aplicamos o sinal de um gerador de função ao eletrodo da porta e observamos que o dispositivo repetiu com sucesso a operação liga/desliga. Também conseguimos explicar as características do dispositivo considerando os efeitos térmicos.
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Hidehiro SHIGA, Yoichi OKABE, "HTS Quasi-Particle Injection Devices for Interfaces between SFQ and CMOS Circuits" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 3, pp. 650-653, March 2002, doi: .
Abstract: We have fabricated a prototype of interface devices between SFQ and CMOS circuits using HTS quasi-particle injection devices. By the injection of quasi-particles, the bridge area becomes resistive and high voltage appears at the drain electrode. As a test of device operation, we applied the signal of a function generator to the gate electrode and observed that the device successfully repeated on/off operation. We also succeeded in explaining the device characteristics by considering the thermal effects.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_3_650/_p
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@ARTICLE{e85-c_3_650,
author={Hidehiro SHIGA, Yoichi OKABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={HTS Quasi-Particle Injection Devices for Interfaces between SFQ and CMOS Circuits},
year={2002},
volume={E85-C},
number={3},
pages={650-653},
abstract={We have fabricated a prototype of interface devices between SFQ and CMOS circuits using HTS quasi-particle injection devices. By the injection of quasi-particles, the bridge area becomes resistive and high voltage appears at the drain electrode. As a test of device operation, we applied the signal of a function generator to the gate electrode and observed that the device successfully repeated on/off operation. We also succeeded in explaining the device characteristics by considering the thermal effects.},
keywords={},
doi={},
ISSN={},
month={March},}
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TY - JOUR
TI - HTS Quasi-Particle Injection Devices for Interfaces between SFQ and CMOS Circuits
T2 - IEICE TRANSACTIONS on Electronics
SP - 650
EP - 653
AU - Hidehiro SHIGA
AU - Yoichi OKABE
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2002
AB - We have fabricated a prototype of interface devices between SFQ and CMOS circuits using HTS quasi-particle injection devices. By the injection of quasi-particles, the bridge area becomes resistive and high voltage appears at the drain electrode. As a test of device operation, we applied the signal of a function generator to the gate electrode and observed that the device successfully repeated on/off operation. We also succeeded in explaining the device characteristics by considering the thermal effects.
ER -