The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Modelos anteriores de dispositivos para Bolômetros de Elétrons Quentes (HEB) aplicam uma abordagem de elemento concentrado para calcular os parâmetros de pequenos sinais. Neste trabalho, parâmetros de grandes sinais são calculados usando uma equação de equilíbrio de calor unidimensional não linear incluindo efeitos de corrente críticos. Equivalentes de pequenos sinais são obtidos resolvendo um balanço de calor linearizado para o termo de batimento de pequenos sinais no HEB. Neste modelo, a densidade de potência de polarização absorvida é tratada como um perfil ao longo da ponte HEB e o feedback eletrotérmico atua de forma diferente em diferentes partes da ponte. Este modelo prevê valores de ganho de conversão mais realistas, sendo cerca de 10 dB inferiores aos anteriores.
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Harald F. MERKEL, Pourya KHOSROPANAH, Aurèle ADAM, Serguei CHEREDNICHENKO, Erik Ludvig KOLLBERG, "A Distributed Device Model for Hot-Electron Bolometers" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 3, pp. 725-732, March 2002, doi: .
Abstract: Previous device models for Hot Electron Bolometers (HEB) apply a lumped element approach to calculate the small signal parameters. In this work, large signal parameters are calculated using a nonlinear one-dimensional heat balance equation including critical current effects. Small signal equivalents are obtained by solving a linearized heat balance for the small signal beat term in the HEB. In this model, the absorbed bias power density is treated as a profile along the HEB bridge and the electrothermal feedback acts differently on different parts of the bridge. This model predicts more realistic conversion gain figures being about 10 dB lower than in previous ones.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_3_725/_p
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@ARTICLE{e85-c_3_725,
author={Harald F. MERKEL, Pourya KHOSROPANAH, Aurèle ADAM, Serguei CHEREDNICHENKO, Erik Ludvig KOLLBERG, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Distributed Device Model for Hot-Electron Bolometers},
year={2002},
volume={E85-C},
number={3},
pages={725-732},
abstract={Previous device models for Hot Electron Bolometers (HEB) apply a lumped element approach to calculate the small signal parameters. In this work, large signal parameters are calculated using a nonlinear one-dimensional heat balance equation including critical current effects. Small signal equivalents are obtained by solving a linearized heat balance for the small signal beat term in the HEB. In this model, the absorbed bias power density is treated as a profile along the HEB bridge and the electrothermal feedback acts differently on different parts of the bridge. This model predicts more realistic conversion gain figures being about 10 dB lower than in previous ones.},
keywords={},
doi={},
ISSN={},
month={March},}
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TY - JOUR
TI - A Distributed Device Model for Hot-Electron Bolometers
T2 - IEICE TRANSACTIONS on Electronics
SP - 725
EP - 732
AU - Harald F. MERKEL
AU - Pourya KHOSROPANAH
AU - Aurèle ADAM
AU - Serguei CHEREDNICHENKO
AU - Erik Ludvig KOLLBERG
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2002
AB - Previous device models for Hot Electron Bolometers (HEB) apply a lumped element approach to calculate the small signal parameters. In this work, large signal parameters are calculated using a nonlinear one-dimensional heat balance equation including critical current effects. Small signal equivalents are obtained by solving a linearized heat balance for the small signal beat term in the HEB. In this model, the absorbed bias power density is treated as a profile along the HEB bridge and the electrothermal feedback acts differently on different parts of the bridge. This model predicts more realistic conversion gain figures being about 10 dB lower than in previous ones.
ER -