The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Este artigo analisa as vantagens da tecnologia MMIC tridimensional de silício, como linhas de transmissão de baixa perda, alto nível de integração e indutores no chip de alto fator Q. Juntamente com o conceito masterslice, esta tecnologia também oferece procedimento de projeto simples, tempo de resposta curto, baixo custo e integração potencial com circuitos LSI. Um amplificador de banda K e um conversor ascendente demonstram a operação de alta frequência e os benefícios de baixo consumo de energia da tecnologia Si 3-D MMIC. Um transceptor Si-bipolar de chip único de banda C é proposto para ilustrar o alto nível de integração oferecido pelo conceito masterslice. Finalmente, os avanços recentes que alcançamos em direção aos indutores on-chip de alto fator Q fornecem o projeto do amplificador de baixo ruído de banda S apresentado neste artigo.
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Belinda PIERNAS, Kenjiro NISHIKAWA, Kenji KAMOGAWA, Ichihiko TOYODA, "Three-Dimensional MMIC Technology on Silicon: Review and Recent Advances" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 7, pp. 1394-1403, July 2002, doi: .
Abstract: This paper reviews the advantages of the silicon three-dimensional MMIC technology such as low loss transmission lines, high integration level, and high Q-factor on-chip inductors. Coupled to the masterslice concept, this technology also offers simple design procedure, short turn-around-time, low cost, and potential integration with LSI circuits. A K-band amplifier and an up-converter demonstrate the high frequency operation and low-power consumption benefits of the Si 3-D MMIC technology. A C-band Si-bipolar single-chip transceiver is proposed to illustrate the high integration level offered by the masterslice concept. Finally, the recent advances we achieved toward high Q-factor on-chip inductors provide the design of the S-band low noise amplifier presented in this paper.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_7_1394/_p
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@ARTICLE{e85-c_7_1394,
author={Belinda PIERNAS, Kenjiro NISHIKAWA, Kenji KAMOGAWA, Ichihiko TOYODA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Three-Dimensional MMIC Technology on Silicon: Review and Recent Advances},
year={2002},
volume={E85-C},
number={7},
pages={1394-1403},
abstract={This paper reviews the advantages of the silicon three-dimensional MMIC technology such as low loss transmission lines, high integration level, and high Q-factor on-chip inductors. Coupled to the masterslice concept, this technology also offers simple design procedure, short turn-around-time, low cost, and potential integration with LSI circuits. A K-band amplifier and an up-converter demonstrate the high frequency operation and low-power consumption benefits of the Si 3-D MMIC technology. A C-band Si-bipolar single-chip transceiver is proposed to illustrate the high integration level offered by the masterslice concept. Finally, the recent advances we achieved toward high Q-factor on-chip inductors provide the design of the S-band low noise amplifier presented in this paper.},
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Three-Dimensional MMIC Technology on Silicon: Review and Recent Advances
T2 - IEICE TRANSACTIONS on Electronics
SP - 1394
EP - 1403
AU - Belinda PIERNAS
AU - Kenjiro NISHIKAWA
AU - Kenji KAMOGAWA
AU - Ichihiko TOYODA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2002
AB - This paper reviews the advantages of the silicon three-dimensional MMIC technology such as low loss transmission lines, high integration level, and high Q-factor on-chip inductors. Coupled to the masterslice concept, this technology also offers simple design procedure, short turn-around-time, low cost, and potential integration with LSI circuits. A K-band amplifier and an up-converter demonstrate the high frequency operation and low-power consumption benefits of the Si 3-D MMIC technology. A C-band Si-bipolar single-chip transceiver is proposed to illustrate the high integration level offered by the masterslice concept. Finally, the recent advances we achieved toward high Q-factor on-chip inductors provide the design of the S-band low noise amplifier presented in this paper.
ER -