The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Um MOSFET de potência altamente eficiente foi desenvolvido para amplificadores de potência RF de 3.6 V para uso em sistemas de telefonia celular GSM (Sistemas Globais para Comunicações Móveis) (880-915 MHz). Ele foi fabricado usando um processo CMOS LSI de 0.45 µm com uma estrutura de siliceto de metal/Si em curto-circuito com Al em vez de uma porta Mo convencional de 0.8 µm. O MOSFET de potência resultante tem uma resistência no estado de 6.9 Ω
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copiar
Yuri KUSAKARI, Masatoshi MORIKAWA, Kazunori ONOZAWA, Iwamichi KOHJIRO, Isao YOSHIDA, "Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 7, pp. 1436-1442, July 2002, doi: .
Abstract: A highly efficient power MOSFET has been developed for 3.6 V RF power amplifiers for use in GSM (Global Systems for Mobile communications) cellular telephone systems (880-915 MHz). It was fabricated using a 0.45-µm CMOS LSI process with an Al-shorted metal-silicide/Si gate structure instead of a conventional 0.8-µm Mo-gate. The resulting power MOSFET has an on-state resistance of 6.9 Ω
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_7_1436/_p
Copiar
@ARTICLE{e85-c_7_1436,
author={Yuri KUSAKARI, Masatoshi MORIKAWA, Kazunori ONOZAWA, Iwamichi KOHJIRO, Isao YOSHIDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System},
year={2002},
volume={E85-C},
number={7},
pages={1436-1442},
abstract={A highly efficient power MOSFET has been developed for 3.6 V RF power amplifiers for use in GSM (Global Systems for Mobile communications) cellular telephone systems (880-915 MHz). It was fabricated using a 0.45-µm CMOS LSI process with an Al-shorted metal-silicide/Si gate structure instead of a conventional 0.8-µm Mo-gate. The resulting power MOSFET has an on-state resistance of 6.9 Ω
keywords={},
doi={},
ISSN={},
month={July},}
Copiar
TY - JOUR
TI - Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System
T2 - IEICE TRANSACTIONS on Electronics
SP - 1436
EP - 1442
AU - Yuri KUSAKARI
AU - Masatoshi MORIKAWA
AU - Kazunori ONOZAWA
AU - Iwamichi KOHJIRO
AU - Isao YOSHIDA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2002
AB - A highly efficient power MOSFET has been developed for 3.6 V RF power amplifiers for use in GSM (Global Systems for Mobile communications) cellular telephone systems (880-915 MHz). It was fabricated using a 0.45-µm CMOS LSI process with an Al-shorted metal-silicide/Si gate structure instead of a conventional 0.8-µm Mo-gate. The resulting power MOSFET has an on-state resistance of 6.9 Ω
ER -