The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Na tecnologia SOI parcialmente esgotada (PD-SOI), o dispositivo de proteção baseado em SCR é desejado devido à sua robustez relativamente alta, mas seu uso é restrito devido à sua baixa tensão de retenção inerente (Vh) e alta tensão de disparo (Vt1). Neste artigo, o retificador controlado de silício com inserção de diodo de disparo lateral do corpo (BSTDISCR) é proposto e verificado em 180 nm Tecnologia PD-SOI. Comparado com outros dispositivos no mesmo processo e outros trabalhos relacionados, o BSTDISCR apresenta-se como um dispositivo de proteção ESD PD-SOI robusto e imune a travamento, com apropriado Vt1 de 6.3 V, Alto Vh de 4.2 V, segunda corrente de ruptura normalizada alta (It2), que indica a robustez da proteção ESD, de 13.3 mA/ µm, capacitância parasita normalizada baixa de 0.74 fF/ µm.
Yibo JIANG
Changzhou Institute of Technology
Hui BI
Changzhou University
Hui LI
Changzhou Institute of Technology
Zhihao XU
Changzhou Institute of Technology
Cheng SHI
Changzhou Institute of Technology
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Yibo JIANG, Hui BI, Hui LI, Zhihao XU, Cheng SHI, "Silicon Controlled Rectifier Based Partially Depleted SOI ESD Protection Device for High Voltage Application" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 4, pp. 191-193, April 2020, doi: 10.1587/transele.2018ECS6024.
Abstract: In partially depleted SOI (PD-SOI) technology, the SCR-based protection device is desired due to its relatively high robustness, but be restricted to use because of its inherent low holding voltage (Vh) and high triggering voltage (Vt1). In this paper, the body-tie side triggering diode inserting silicon controlled rectifier (BSTDISCR) is proposed and verified in 180 nm PD-SOI technology. Compared to the other devices in the same process and other related works, the BSTDISCR presents as a robust and latchup-immune PD-SOI ESD protection device, with appropriate Vt1 of 6.3 V, high Vh of 4.2 V, high normalized second breakdown current (It2), which indicates the ESD protection robustness, of 13.3 mA/µm, low normalized parasitic capacitance of 0.74 fF/µm.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018ECS6024/_p
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@ARTICLE{e103-c_4_191,
author={Yibo JIANG, Hui BI, Hui LI, Zhihao XU, Cheng SHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Silicon Controlled Rectifier Based Partially Depleted SOI ESD Protection Device for High Voltage Application},
year={2020},
volume={E103-C},
number={4},
pages={191-193},
abstract={In partially depleted SOI (PD-SOI) technology, the SCR-based protection device is desired due to its relatively high robustness, but be restricted to use because of its inherent low holding voltage (Vh) and high triggering voltage (Vt1). In this paper, the body-tie side triggering diode inserting silicon controlled rectifier (BSTDISCR) is proposed and verified in 180 nm PD-SOI technology. Compared to the other devices in the same process and other related works, the BSTDISCR presents as a robust and latchup-immune PD-SOI ESD protection device, with appropriate Vt1 of 6.3 V, high Vh of 4.2 V, high normalized second breakdown current (It2), which indicates the ESD protection robustness, of 13.3 mA/µm, low normalized parasitic capacitance of 0.74 fF/µm.},
keywords={},
doi={10.1587/transele.2018ECS6024},
ISSN={1745-1353},
month={April},}
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TY - JOUR
TI - Silicon Controlled Rectifier Based Partially Depleted SOI ESD Protection Device for High Voltage Application
T2 - IEICE TRANSACTIONS on Electronics
SP - 191
EP - 193
AU - Yibo JIANG
AU - Hui BI
AU - Hui LI
AU - Zhihao XU
AU - Cheng SHI
PY - 2020
DO - 10.1587/transele.2018ECS6024
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2020
AB - In partially depleted SOI (PD-SOI) technology, the SCR-based protection device is desired due to its relatively high robustness, but be restricted to use because of its inherent low holding voltage (Vh) and high triggering voltage (Vt1). In this paper, the body-tie side triggering diode inserting silicon controlled rectifier (BSTDISCR) is proposed and verified in 180 nm PD-SOI technology. Compared to the other devices in the same process and other related works, the BSTDISCR presents as a robust and latchup-immune PD-SOI ESD protection device, with appropriate Vt1 of 6.3 V, high Vh of 4.2 V, high normalized second breakdown current (It2), which indicates the ESD protection robustness, of 13.3 mA/µm, low normalized parasitic capacitance of 0.74 fF/µm.
ER -