The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Fabricamos pontos quânticos de Si (QDs) de múltiplas pilhas com e sem núcleo Ge incorporado em um SiO2 rede em n-Si (100) e estudou suas características de emissão de elétrons de campo sob aplicação de polarização DC. Para o caso de pilhas de Si-QD puras com diferentes números de pilha de pontos, o campo elétrico médio em estruturas empilhadas de pontos nas quais a corrente de emissão de elétrons apareceu atingiu o valor mínimo em um número de pilha de 11. Isso pode ser atribuído à otimização do elétron emissão devido ao aumento da concentração do campo elétrico nas camadas superiores das estruturas empilhadas e à redução da corrente de injeção de elétrons do substrato n-Si, com um aumento no número de pilhas. Descobrimos também que, ao introduzir o núcleo Ge nos Si-QDs, o campo elétrico médio para a emissão de elétrons pode ser reduzido abaixo daquele das estruturas puras empilhadas em Si-QDs. Este resultado implica que o campo elétrico está mais concentrado nos Si-QDs superiores com camadas do núcleo Ge devido ao potencial profundo para buracos no núcleo Ge.
Yuto FUTAMURA
Nagoya University
Katsunori MAKIHARA
Nagoya University
Akio OHTA
Nagoya University
Mitsuhisa IKEDA
Nagoya University
Seiichi MIYAZAKI
Nagoya University
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copiar
Yuto FUTAMURA, Katsunori MAKIHARA, Akio OHTA, Mitsuhisa IKEDA, Seiichi MIYAZAKI, "Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 6, pp. 458-461, June 2019, doi: 10.1587/transele.2018FUP0007.
Abstract: We have fabricated multiple-stacked Si quantum dots (QDs) with and without Ge core embedded in a SiO2 network on n-Si(100) and studied their field electron emission characteristics under DC bias application. For the case of pure Si-QD stacks with different dot-stack numbers, the average electric field in dot-stacked structures at which electron emission current appeared reached minimum value at a stack number of 11. This can be attributed to optimization of the electron emission due to enhanced electric field concentration in the upper layers of the dot-stacked structures and reduction of the electron injection current from the n-Si substrate, with an increased stack number. We also found that, by introducing Ge core into Si-QDs, the average electric field for the electron emission can be reduced below that from pure Si-QDs-stacked structures. This result implies that the electric field is more concentrated in the upper Si-QDs with Ge core layers due to deep potential well for holes in the Ge core.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018FUP0007/_p
Copiar
@ARTICLE{e102-c_6_458,
author={Yuto FUTAMURA, Katsunori MAKIHARA, Akio OHTA, Mitsuhisa IKEDA, Seiichi MIYAZAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots},
year={2019},
volume={E102-C},
number={6},
pages={458-461},
abstract={We have fabricated multiple-stacked Si quantum dots (QDs) with and without Ge core embedded in a SiO2 network on n-Si(100) and studied their field electron emission characteristics under DC bias application. For the case of pure Si-QD stacks with different dot-stack numbers, the average electric field in dot-stacked structures at which electron emission current appeared reached minimum value at a stack number of 11. This can be attributed to optimization of the electron emission due to enhanced electric field concentration in the upper layers of the dot-stacked structures and reduction of the electron injection current from the n-Si substrate, with an increased stack number. We also found that, by introducing Ge core into Si-QDs, the average electric field for the electron emission can be reduced below that from pure Si-QDs-stacked structures. This result implies that the electric field is more concentrated in the upper Si-QDs with Ge core layers due to deep potential well for holes in the Ge core.},
keywords={},
doi={10.1587/transele.2018FUP0007},
ISSN={1745-1353},
month={June},}
Copiar
TY - JOUR
TI - Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots
T2 - IEICE TRANSACTIONS on Electronics
SP - 458
EP - 461
AU - Yuto FUTAMURA
AU - Katsunori MAKIHARA
AU - Akio OHTA
AU - Mitsuhisa IKEDA
AU - Seiichi MIYAZAKI
PY - 2019
DO - 10.1587/transele.2018FUP0007
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2019
AB - We have fabricated multiple-stacked Si quantum dots (QDs) with and without Ge core embedded in a SiO2 network on n-Si(100) and studied their field electron emission characteristics under DC bias application. For the case of pure Si-QD stacks with different dot-stack numbers, the average electric field in dot-stacked structures at which electron emission current appeared reached minimum value at a stack number of 11. This can be attributed to optimization of the electron emission due to enhanced electric field concentration in the upper layers of the dot-stacked structures and reduction of the electron injection current from the n-Si substrate, with an increased stack number. We also found that, by introducing Ge core into Si-QDs, the average electric field for the electron emission can be reduced below that from pure Si-QDs-stacked structures. This result implies that the electric field is more concentrated in the upper Si-QDs with Ge core layers due to deep potential well for holes in the Ge core.
ER -