The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Desenvolvemos o sensor de pressão flexível baseado em OFET de porta dupla usando um filme fino de naftalato de polietileno (PEN, 25 µm) como substrato. O desempenho foi equivalente ao fabricado no substrato de vidro, podendo também ser utilizado na superfície curva. A corrente de drenagem no sensor de pressão flexível foi aumentada de acordo com a carga de pressão sem aplicação de tensão na porta. A magnitude da mudança na corrente de drenagem em relação à aplicação de pressão foi cerca de 2.5 vezes maior do que a do dispositivo no substrato de vidro.
Tatsuya ISHIKAWA
Japan Advanced Institute of Science and Technology
Heisuke SAKAI
Japan Advanced Institute of Science and Technology
Hideyuki MURATA
Japan Advanced Institute of Science and Technology
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Tatsuya ISHIKAWA, Heisuke SAKAI, Hideyuki MURATA, "Fabrication of the Flexible Dual-Gate OFET Based Organic Pressure Sensor" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 2, pp. 188-191, February 2019, doi: 10.1587/transele.2018OMS0013.
Abstract: We have developed the flexible dual-gate OFET based pressure sensor using a thin polyethylene naphthalate (PEN, 25 µm) film as a substrate. The performance was equivalent to that fabricated on the glass substrate, and it could also be used on the curved surface. Drain current in the flexible pressure sensor was increased according to the pressure load without application of gate voltage. The magnitude of the change in drain current with respect to pressure application was about 2.5 times larger than that for the device on the glass substrate.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018OMS0013/_p
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@ARTICLE{e102-c_2_188,
author={Tatsuya ISHIKAWA, Heisuke SAKAI, Hideyuki MURATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication of the Flexible Dual-Gate OFET Based Organic Pressure Sensor},
year={2019},
volume={E102-C},
number={2},
pages={188-191},
abstract={We have developed the flexible dual-gate OFET based pressure sensor using a thin polyethylene naphthalate (PEN, 25 µm) film as a substrate. The performance was equivalent to that fabricated on the glass substrate, and it could also be used on the curved surface. Drain current in the flexible pressure sensor was increased according to the pressure load without application of gate voltage. The magnitude of the change in drain current with respect to pressure application was about 2.5 times larger than that for the device on the glass substrate.},
keywords={},
doi={10.1587/transele.2018OMS0013},
ISSN={1745-1353},
month={February},}
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TY - JOUR
TI - Fabrication of the Flexible Dual-Gate OFET Based Organic Pressure Sensor
T2 - IEICE TRANSACTIONS on Electronics
SP - 188
EP - 191
AU - Tatsuya ISHIKAWA
AU - Heisuke SAKAI
AU - Hideyuki MURATA
PY - 2019
DO - 10.1587/transele.2018OMS0013
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2019
AB - We have developed the flexible dual-gate OFET based pressure sensor using a thin polyethylene naphthalate (PEN, 25 µm) film as a substrate. The performance was equivalent to that fabricated on the glass substrate, and it could also be used on the curved surface. Drain current in the flexible pressure sensor was increased according to the pressure load without application of gate voltage. The magnitude of the change in drain current with respect to pressure application was about 2.5 times larger than that for the device on the glass substrate.
ER -