The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
As seções transversais que causam distúrbios de evento único por íons pesados são sensíveis à concentração de dopagem nas regiões de fonte e dreno, e à estrutura das regiões elevadas de fonte e dreno, especialmente em FDSOI. Devido ao efeito bipolar parasita (PBE), flip-flops endurecidos por radiação com transistores empilhados em FDSOI tendem a ter erros suaves, o que é consistente com os resultados de medição por irradiação de íons pesados. Os resultados da simulação do dispositivo neste estudo mostram que a seção transversal é proporcional à espessura do silício da camada elevada e inversamente proporcional à concentração de dopagem no dreno. O aumento da concentração de dopagem na região de fonte e dreno aumenta a recombinação Auger dos portadores e suprime o efeito bipolar parasitário. O PBE também é suprimido pela diminuição da espessura do silício da camada elevada. Cgg-Vgs e Ids-Vgs as características mudam menores do que a mudança suave de tolerância ao erro. A tolerância suave a erros pode ser efetivamente otimizada usando esses dois determinantes com apenas um pequeno impacto nas características do transistor.
Kentaro KOJIMA
Kyoto Institute of Technology
Kodai YAMADA
Kyoto Institute of Technology
Jun FURUTA
Kyoto Institute of Technology
Kazutoshi KOBAYASHI
Kyoto Institute of Technology
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Kentaro KOJIMA, Kodai YAMADA, Jun FURUTA, Kazutoshi KOBAYASHI, "Evaluation of Heavy-Ion-Induced Single Event Upset Cross Sections of a 65-nm Thin BOX FD-SOI Flip-Flops Composed of Stacked Inverters" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 4, pp. 144-152, April 2020, doi: 10.1587/transele.2019CDP0007.
Abstract: Cross sections that cause single event upsets by heavy ions are sensitive to doping concentration in the source and drain regions, and the structure of the raised source and drain regions especially in FDSOI. Due to the parasitic bipolar effect (PBE), radiation-hardened flip flops with stacked transistors in FDSOI tend to have soft errors, which is consistent with measurement results by heavy-ion irradiation. Device-simulation results in this study show that the cross section is proportional to the silicon thickness of the raised layer and inversely proportional to the doping concentration in the drain. Increasing the doping concentration in the source and drain region enhance the Auger recombination of carriers there and suppresses the parasitic bipolar effect. PBE is also suppressed by decreasing the silicon thickness of the raised layer. Cgg-Vgs and Ids-Vgs characteristics change smaller than soft error tolerance change. Soft error tolerance can be effectively optimized by using these two determinants with only a small impact on transistor characteristics.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019CDP0007/_p
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@ARTICLE{e103-c_4_144,
author={Kentaro KOJIMA, Kodai YAMADA, Jun FURUTA, Kazutoshi KOBAYASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Evaluation of Heavy-Ion-Induced Single Event Upset Cross Sections of a 65-nm Thin BOX FD-SOI Flip-Flops Composed of Stacked Inverters},
year={2020},
volume={E103-C},
number={4},
pages={144-152},
abstract={Cross sections that cause single event upsets by heavy ions are sensitive to doping concentration in the source and drain regions, and the structure of the raised source and drain regions especially in FDSOI. Due to the parasitic bipolar effect (PBE), radiation-hardened flip flops with stacked transistors in FDSOI tend to have soft errors, which is consistent with measurement results by heavy-ion irradiation. Device-simulation results in this study show that the cross section is proportional to the silicon thickness of the raised layer and inversely proportional to the doping concentration in the drain. Increasing the doping concentration in the source and drain region enhance the Auger recombination of carriers there and suppresses the parasitic bipolar effect. PBE is also suppressed by decreasing the silicon thickness of the raised layer. Cgg-Vgs and Ids-Vgs characteristics change smaller than soft error tolerance change. Soft error tolerance can be effectively optimized by using these two determinants with only a small impact on transistor characteristics.},
keywords={},
doi={10.1587/transele.2019CDP0007},
ISSN={1745-1353},
month={April},}
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TY - JOUR
TI - Evaluation of Heavy-Ion-Induced Single Event Upset Cross Sections of a 65-nm Thin BOX FD-SOI Flip-Flops Composed of Stacked Inverters
T2 - IEICE TRANSACTIONS on Electronics
SP - 144
EP - 152
AU - Kentaro KOJIMA
AU - Kodai YAMADA
AU - Jun FURUTA
AU - Kazutoshi KOBAYASHI
PY - 2020
DO - 10.1587/transele.2019CDP0007
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2020
AB - Cross sections that cause single event upsets by heavy ions are sensitive to doping concentration in the source and drain regions, and the structure of the raised source and drain regions especially in FDSOI. Due to the parasitic bipolar effect (PBE), radiation-hardened flip flops with stacked transistors in FDSOI tend to have soft errors, which is consistent with measurement results by heavy-ion irradiation. Device-simulation results in this study show that the cross section is proportional to the silicon thickness of the raised layer and inversely proportional to the doping concentration in the drain. Increasing the doping concentration in the source and drain region enhance the Auger recombination of carriers there and suppresses the parasitic bipolar effect. PBE is also suppressed by decreasing the silicon thickness of the raised layer. Cgg-Vgs and Ids-Vgs characteristics change smaller than soft error tolerance change. Soft error tolerance can be effectively optimized by using these two determinants with only a small impact on transistor characteristics.
ER -