The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Realizamos uma análise de percolação dependente do tempo dos fenômenos de degradação em junções de tunelamento magnético ultrafinas de CoFeB / MgO / CoFeB. O objetivo foi compreender a física da degradação microscópica do tunelamento coerente e a limitação de espessura da barreira de MgO. Propomos dois modelos: um modelo de tunelamento assistido por armadilha (TAL) e um modelo de vazamento assistido por defeito filamentar (FAL). A correlação entre o comportamento da deriva da resistência e a vida útil da barreira foi então calculada e comparada com dados reais baseados nestes modelos. A relação entre o comportamento da resistência à deriva e a vida útil da barreira foi bem explicada pelo modelo TAL, pela formação aleatória de armadilhas na barreira e pela formação do caminho de percolação que leva à quebra da barreira. Com base no modelo TAL, a inclinação medida do TDDB Weibull (β) foi menor que o valor estimado pelo modelo. Ao remover o efeito de alguns defeitos iniciais na barreira, uma barreira ultrafina de tunelamento de MgO em MTJ tem o potencial para uma vida útil muito melhor com uma melhor inclinação de Weibull, mesmo com espessura de 3ML. Este método é bastante simples, mas útil para compreender profundamente a física da degradação microscópica em filmes dielétricos sob estresse TDDB.
Keiji HOSOTANI
Kioxia Corp.
Makoto NAGAMINE
Kioxia Corp.
Ryu HASUNUMA
University of Tsukuba
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Keiji HOSOTANI, Makoto NAGAMINE, Ryu HASUNUMA, "Time Dependent Percolation Analysis of the Degradation of Coherent Tunneling in Ultra-Thin CoFeB/MgO/CoFeB Magnetic Tunneling Junctions" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 5, pp. 254-262, May 2020, doi: 10.1587/transele.2019ECP5014.
Abstract: We performed a time dependent percolation analysis of the degradation phenomena in ultra-thin CoFeB/MgO/CoFeB magnetic tunneling junctions. The objective was to understand the microscopic degradation physics of coherent tunneling and the thickness limitation of the MgO barrier. We propose two models: a trap assisted tunneling (TAL) model and a filamentary defect assisted leakage (FAL) model. The correlation between resistance drift behavior and barrier lifetime was then calculated and compared with real data based on these models. The relationship between the resistance drift behavior and barrier lifetime was found to be well explained by the TAL model, the random trap formation in the barrier and the percolation path formation which lead to barrier breakdown. Based on the TAL model, the measured TDDB Weibull slope (β) was smaller than the value estimated by the model. By removing the effect of some initial defects in the barrier, an ultra-thin MgO tunneling barrier in MTJ has the potential for a much better lifetime with a better Weibull slope even at 3ML thickness. This method is rather simple but useful to deeply understand the microscopic degradation physics in dielectric films under TDDB stress.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019ECP5014/_p
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@ARTICLE{e103-c_5_254,
author={Keiji HOSOTANI, Makoto NAGAMINE, Ryu HASUNUMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Time Dependent Percolation Analysis of the Degradation of Coherent Tunneling in Ultra-Thin CoFeB/MgO/CoFeB Magnetic Tunneling Junctions},
year={2020},
volume={E103-C},
number={5},
pages={254-262},
abstract={We performed a time dependent percolation analysis of the degradation phenomena in ultra-thin CoFeB/MgO/CoFeB magnetic tunneling junctions. The objective was to understand the microscopic degradation physics of coherent tunneling and the thickness limitation of the MgO barrier. We propose two models: a trap assisted tunneling (TAL) model and a filamentary defect assisted leakage (FAL) model. The correlation between resistance drift behavior and barrier lifetime was then calculated and compared with real data based on these models. The relationship between the resistance drift behavior and barrier lifetime was found to be well explained by the TAL model, the random trap formation in the barrier and the percolation path formation which lead to barrier breakdown. Based on the TAL model, the measured TDDB Weibull slope (β) was smaller than the value estimated by the model. By removing the effect of some initial defects in the barrier, an ultra-thin MgO tunneling barrier in MTJ has the potential for a much better lifetime with a better Weibull slope even at 3ML thickness. This method is rather simple but useful to deeply understand the microscopic degradation physics in dielectric films under TDDB stress.},
keywords={},
doi={10.1587/transele.2019ECP5014},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Time Dependent Percolation Analysis of the Degradation of Coherent Tunneling in Ultra-Thin CoFeB/MgO/CoFeB Magnetic Tunneling Junctions
T2 - IEICE TRANSACTIONS on Electronics
SP - 254
EP - 262
AU - Keiji HOSOTANI
AU - Makoto NAGAMINE
AU - Ryu HASUNUMA
PY - 2020
DO - 10.1587/transele.2019ECP5014
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2020
AB - We performed a time dependent percolation analysis of the degradation phenomena in ultra-thin CoFeB/MgO/CoFeB magnetic tunneling junctions. The objective was to understand the microscopic degradation physics of coherent tunneling and the thickness limitation of the MgO barrier. We propose two models: a trap assisted tunneling (TAL) model and a filamentary defect assisted leakage (FAL) model. The correlation between resistance drift behavior and barrier lifetime was then calculated and compared with real data based on these models. The relationship between the resistance drift behavior and barrier lifetime was found to be well explained by the TAL model, the random trap formation in the barrier and the percolation path formation which lead to barrier breakdown. Based on the TAL model, the measured TDDB Weibull slope (β) was smaller than the value estimated by the model. By removing the effect of some initial defects in the barrier, an ultra-thin MgO tunneling barrier in MTJ has the potential for a much better lifetime with a better Weibull slope even at 3ML thickness. This method is rather simple but useful to deeply understand the microscopic degradation physics in dielectric films under TDDB stress.
ER -