The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Uma nova abordagem de projeto de amplificador de potência de RF de banda larga (PA) é introduzida neste trabalho com a combinação de parâmetro X de sinal grande e técnica de frequência real (RFT). Uma análise teórica do parâmetro X de sinal grande é revisitada e um método de simplificação é introduzido para determinar as impedâncias ótimas de sinal grande de um dispositivo HEMT de nitreto de gálio (GaN HEMT). Com a extração ideal de impedância em uma ampla faixa de frequência (0.3 a 2.0 GHz), uma rede de correspondência de banda larga é construída empregando RFT e o projeto final é implementado com elementos práticos mistos. O protótipo RF PA de banda larga demonstra uma potência de saída de 40 dBm. A eficiência média de drenagem do PA é superior a 60%; ao mesmo tempo que exibe desempenho de ganho plano aceitável (12±0.25 dB) na banda de frequência de (0.3-2.0 GHz). O PA projetado usando a abordagem proposta produz um formato pequeno e um custo de produção relativamente menor em relação aos PAs semelhantes projetados com os métodos clássicos. Espera-se que o método de projeto recentemente proposto seja utilizado para construir amplificadores de potência para aplicações de comunicações de rádio.
Ragavan KRISHNAMOORTHY
University of Malaya
Narendra KUMAR
University of Malaya
Andrei GREBENNIKOV
Sumitomo Electric Europe Ltd.
Binboga Siddik YARMAN
Istanbul University
Harikrishnan RAMIAH
University of Malaya
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Ragavan KRISHNAMOORTHY, Narendra KUMAR, Andrei GREBENNIKOV, Binboga Siddik YARMAN, Harikrishnan RAMIAH, "Broadband RF Power Amplifier with Combination of Large Signal X-Parameter and Real Frequency Techniques" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 5, pp. 225-230, May 2020, doi: 10.1587/transele.2019ECP5036.
Abstract: A new design approach of broadband RF power amplifier (PA) is introduced in this work with combination of large signal X-parameter and Real-Frequency Technique (RFT). A theoretical analysis of large signal X-parameter is revisited, and a simplification method is introduced to determine the optimum large signal impedances of a Gallium Nitride HEMT (GaN HEMT) device. With the optimum impedance extraction over the wide frequency range (0.3 to 2.0 GHz), a wideband matching network is constructed employing RFT and the final design is implemented with practical mixed-lumped elements. The prototype broadband RF PA demonstrates an output power of 40 dBm. The average drain efficiency of the PA is found to be more than 60%; while exhibiting acceptable flat gain performance (12±0.25 dB) over the frequency band of (0.3-2.0 GHz). The PA designed using the proposed approach yields in small form factor and relatively lower production cost over those of similar PAs designed with the classical methods. It is expected that the newly proposed design method will be utilized to construct power amplifiers for radio communications applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019ECP5036/_p
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@ARTICLE{e103-c_5_225,
author={Ragavan KRISHNAMOORTHY, Narendra KUMAR, Andrei GREBENNIKOV, Binboga Siddik YARMAN, Harikrishnan RAMIAH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Broadband RF Power Amplifier with Combination of Large Signal X-Parameter and Real Frequency Techniques},
year={2020},
volume={E103-C},
number={5},
pages={225-230},
abstract={A new design approach of broadband RF power amplifier (PA) is introduced in this work with combination of large signal X-parameter and Real-Frequency Technique (RFT). A theoretical analysis of large signal X-parameter is revisited, and a simplification method is introduced to determine the optimum large signal impedances of a Gallium Nitride HEMT (GaN HEMT) device. With the optimum impedance extraction over the wide frequency range (0.3 to 2.0 GHz), a wideband matching network is constructed employing RFT and the final design is implemented with practical mixed-lumped elements. The prototype broadband RF PA demonstrates an output power of 40 dBm. The average drain efficiency of the PA is found to be more than 60%; while exhibiting acceptable flat gain performance (12±0.25 dB) over the frequency band of (0.3-2.0 GHz). The PA designed using the proposed approach yields in small form factor and relatively lower production cost over those of similar PAs designed with the classical methods. It is expected that the newly proposed design method will be utilized to construct power amplifiers for radio communications applications.},
keywords={},
doi={10.1587/transele.2019ECP5036},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Broadband RF Power Amplifier with Combination of Large Signal X-Parameter and Real Frequency Techniques
T2 - IEICE TRANSACTIONS on Electronics
SP - 225
EP - 230
AU - Ragavan KRISHNAMOORTHY
AU - Narendra KUMAR
AU - Andrei GREBENNIKOV
AU - Binboga Siddik YARMAN
AU - Harikrishnan RAMIAH
PY - 2020
DO - 10.1587/transele.2019ECP5036
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2020
AB - A new design approach of broadband RF power amplifier (PA) is introduced in this work with combination of large signal X-parameter and Real-Frequency Technique (RFT). A theoretical analysis of large signal X-parameter is revisited, and a simplification method is introduced to determine the optimum large signal impedances of a Gallium Nitride HEMT (GaN HEMT) device. With the optimum impedance extraction over the wide frequency range (0.3 to 2.0 GHz), a wideband matching network is constructed employing RFT and the final design is implemented with practical mixed-lumped elements. The prototype broadband RF PA demonstrates an output power of 40 dBm. The average drain efficiency of the PA is found to be more than 60%; while exhibiting acceptable flat gain performance (12±0.25 dB) over the frequency band of (0.3-2.0 GHz). The PA designed using the proposed approach yields in small form factor and relatively lower production cost over those of similar PAs designed with the classical methods. It is expected that the newly proposed design method will be utilized to construct power amplifiers for radio communications applications.
ER -