The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Fabricamos um modulador em fase e quadratura de polarização dupla baseado em InP (DP-IQ) que consiste em um conjunto de moduladores Mach-Zehnder (MZ) integrado com resistores de terminação de RF e parte traseira através de orifícios para moduladores de driver coerentes de alta largura de banda e revelamos seu alta fiabilidade. Essas integrações permitiram que o tamanho do chip (tamanho do chip: 4.4 mm × 3 mm) fosse reduzido em 59% em comparação com o chip anterior sem essas integrações, ou seja, o chip anterior precisava de 8 resistores de chip para terminar sinais de RF e 12 eletrodos de RF para a conexão elétrica com esses resistores em uma configuração Sinal-Terra-Sinal. Este modulador MZ exibiu uma largura de banda de 3 dB de cerca de 40 GHz como sua resposta elétrica/óptica, o que é suficiente para sistemas de transmissão coerentes de mais de 400 Gbit/s usando modulação de amplitude em quadratura de 16 ários (QAM) e sinais 64QAM. Além disso, investigamos uma rápida degradação que afeta a confiabilidade dos moduladores DP-IQ baseados em InP. Essa rápida degradação que chamamos de dano óptico é causada pela forte potência da luz incidente e por uma alta condição de tensão de polarização reversa na entrada de um eletrodo em cada braço dos moduladores MZ. Esta rápida degradação torna difícil estimar a vida útil do chip usando um teste de envelhecimento acelerado, porque o valor da tensão de ruptura que induz dano óptico varia consideravelmente dependendo das condições, como potência da luz, comprimento de onda de operação e temperatura do chip. Portanto, optamos pelo método de teste de estresse em etapas para investigar a vida útil do chip. Como resultado, confirmamos que ocorreram danos ópticos quando a densidade da fotocorrente na entrada de um eletrodo excedeu a densidade de corrente limite e demonstramos que os moduladores baseados em InP não se degradavam a menos que as condições de operação atingissem a densidade de corrente limite. Essa densidade de corrente limite era independente da potência da luz incidente, do comprimento de onda de operação e da temperatura do chip.
Hajime TANAKA
Sumitomo Electric Industries, Ltd.
Tsutomu ISHIKAWA
Sumitomo Electric Industries, Ltd.
Takashi KITAMURA
Sumitomo Electric Industries, Ltd.
Masataka WATANABE
Sumitomo Electric Industries, Ltd.
Ryuji YAMABI
Sumitomo Electric Industries, Ltd.
Ryo YAMAGUCHI
Sumitomo Electric Industries, Ltd.
Naoya KONO
Sumitomo Electric Industries, Ltd.
Takehiko KIKUCHI
Sumitomo Electric Industries, Ltd.
Morihiro SEKI
Sumitomo Electric Industries, Ltd.
Tomokazu KATSUYAMA
Sumitomo Electric Industries, Ltd.
Mitsuru EKAWA
Sumitomo Electric Industries, Ltd.
Hajime SHOJI
Sumitomo Electric Industries, Ltd.
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Hajime TANAKA, Tsutomu ISHIKAWA, Takashi KITAMURA, Masataka WATANABE, Ryuji YAMABI, Ryo YAMAGUCHI, Naoya KONO, Takehiko KIKUCHI, Morihiro SEKI, Tomokazu KATSUYAMA, Mitsuru EKAWA, Hajime SHOJI, "Highly Reliable and Compact InP-Based In-Phase and Quadrature Modulators for Over 400 Gbit/s Coherent Transmission Systems" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 11, pp. 661-668, November 2020, doi: 10.1587/transele.2019OCP0005.
Abstract: We fabricated an InP-based dual-polarization In-phase and Quadrature (DP-IQ) modulator consisting of a Mach-Zehnder (MZ) modulator array integrated with RF termination resistors and backside via holes for high-bandwidth coherent driver modulators and revealed its high reliability. These integrations allowed the chip size (Chip size: 4.4mm×3mm) to be reduced by 59% compared with the previous chip without these integrations, that is, the previous chip needed 8 chip-resistors for terminating RF signals and 12 RF electrode pads for the electrical connection with these resistors in a Signal-Ground-Signal configuration. This MZ modulator exhibited a 3-dB bandwidth of around 40 GHz as its electrical/optical response, which is sufficient for over 400 Gbit/s coherent transmission systems using 16-ary quadrature amplitude modulation (QAM) and 64QAM signals. Also, we investigated a rapid degradation which affects the reliability of InP-based DP-IQ modulators. This rapid degradation we called optical damage is caused by strong incident light power and a high reverse bias voltage condition at the entrance of an electrode in each arm of the MZ modulators. This rapid degradation makes it difficult to estimate the lifetime of the chip using an accelerated aging test, because the value of the breakdown voltage which induces optical damage varies considerably depending on conditions, such as light power, operation wavelength, and chip temperature. Therefore, we opted for the step stress test method to investigate the lifetime of the chip. As a result, we confirmed that optical damage occurred when photo-current density at the entrance of an electrode exceeded threshold current density and demonstrated that InP-based modulators did not degrade unless operation conditions reached threshold current density. This threshold current density was independent of incident light power, operation wavelength and chip temperature.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019OCP0005/_p
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@ARTICLE{e103-c_11_661,
author={Hajime TANAKA, Tsutomu ISHIKAWA, Takashi KITAMURA, Masataka WATANABE, Ryuji YAMABI, Ryo YAMAGUCHI, Naoya KONO, Takehiko KIKUCHI, Morihiro SEKI, Tomokazu KATSUYAMA, Mitsuru EKAWA, Hajime SHOJI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Highly Reliable and Compact InP-Based In-Phase and Quadrature Modulators for Over 400 Gbit/s Coherent Transmission Systems},
year={2020},
volume={E103-C},
number={11},
pages={661-668},
abstract={We fabricated an InP-based dual-polarization In-phase and Quadrature (DP-IQ) modulator consisting of a Mach-Zehnder (MZ) modulator array integrated with RF termination resistors and backside via holes for high-bandwidth coherent driver modulators and revealed its high reliability. These integrations allowed the chip size (Chip size: 4.4mm×3mm) to be reduced by 59% compared with the previous chip without these integrations, that is, the previous chip needed 8 chip-resistors for terminating RF signals and 12 RF electrode pads for the electrical connection with these resistors in a Signal-Ground-Signal configuration. This MZ modulator exhibited a 3-dB bandwidth of around 40 GHz as its electrical/optical response, which is sufficient for over 400 Gbit/s coherent transmission systems using 16-ary quadrature amplitude modulation (QAM) and 64QAM signals. Also, we investigated a rapid degradation which affects the reliability of InP-based DP-IQ modulators. This rapid degradation we called optical damage is caused by strong incident light power and a high reverse bias voltage condition at the entrance of an electrode in each arm of the MZ modulators. This rapid degradation makes it difficult to estimate the lifetime of the chip using an accelerated aging test, because the value of the breakdown voltage which induces optical damage varies considerably depending on conditions, such as light power, operation wavelength, and chip temperature. Therefore, we opted for the step stress test method to investigate the lifetime of the chip. As a result, we confirmed that optical damage occurred when photo-current density at the entrance of an electrode exceeded threshold current density and demonstrated that InP-based modulators did not degrade unless operation conditions reached threshold current density. This threshold current density was independent of incident light power, operation wavelength and chip temperature.},
keywords={},
doi={10.1587/transele.2019OCP0005},
ISSN={1745-1353},
month={November},}
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TY - JOUR
TI - Highly Reliable and Compact InP-Based In-Phase and Quadrature Modulators for Over 400 Gbit/s Coherent Transmission Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 661
EP - 668
AU - Hajime TANAKA
AU - Tsutomu ISHIKAWA
AU - Takashi KITAMURA
AU - Masataka WATANABE
AU - Ryuji YAMABI
AU - Ryo YAMAGUCHI
AU - Naoya KONO
AU - Takehiko KIKUCHI
AU - Morihiro SEKI
AU - Tomokazu KATSUYAMA
AU - Mitsuru EKAWA
AU - Hajime SHOJI
PY - 2020
DO - 10.1587/transele.2019OCP0005
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2020
AB - We fabricated an InP-based dual-polarization In-phase and Quadrature (DP-IQ) modulator consisting of a Mach-Zehnder (MZ) modulator array integrated with RF termination resistors and backside via holes for high-bandwidth coherent driver modulators and revealed its high reliability. These integrations allowed the chip size (Chip size: 4.4mm×3mm) to be reduced by 59% compared with the previous chip without these integrations, that is, the previous chip needed 8 chip-resistors for terminating RF signals and 12 RF electrode pads for the electrical connection with these resistors in a Signal-Ground-Signal configuration. This MZ modulator exhibited a 3-dB bandwidth of around 40 GHz as its electrical/optical response, which is sufficient for over 400 Gbit/s coherent transmission systems using 16-ary quadrature amplitude modulation (QAM) and 64QAM signals. Also, we investigated a rapid degradation which affects the reliability of InP-based DP-IQ modulators. This rapid degradation we called optical damage is caused by strong incident light power and a high reverse bias voltage condition at the entrance of an electrode in each arm of the MZ modulators. This rapid degradation makes it difficult to estimate the lifetime of the chip using an accelerated aging test, because the value of the breakdown voltage which induces optical damage varies considerably depending on conditions, such as light power, operation wavelength, and chip temperature. Therefore, we opted for the step stress test method to investigate the lifetime of the chip. As a result, we confirmed that optical damage occurred when photo-current density at the entrance of an electrode exceeded threshold current density and demonstrated that InP-based modulators did not degrade unless operation conditions reached threshold current density. This threshold current density was independent of incident light power, operation wavelength and chip temperature.
ER -